NVMSD6N303R2G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	950pF @ 24V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	32 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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NVMSD6N303R2G is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and belongs to the single-chip MOSFET family of products. It is a high performance device, comprising of ultra-low threshold voltage and fast switching speed. It is ideal for use in a wide range of applications, especially where low on-resistance and very fast switching times are required.The NVMSD6N303R2G MOSFET is a two-terminal device that provides low voltage, low on-resistance, high speed switching and an ultra-fast switching time. In addition, the device features a low input capacitance, making it suitable for high-frequency operation. The on-resistance of this device is very low, allowing for low power consumption.The NVMSD6N303R2G MOSFET is suitable for use in a variety of applications. It is ideal for switching power supplies, DC-DC converters, integrated circuits, LED lighting and automotive applications. The device is suitable for switching between power components as well as controlling devices such as relays, motors and other digital devices. In addition, the device supports overload protection and has a low current consumption.The working principle of the NVMSD6N303R2G MOSFET is based on the junction field-effect technology. This type of device consists of a MOS capacitor and two metal-oxide-semiconductor layers. The application of a voltage between the gate and the source of the MOSFET creates an electric field that causes the source-drain current to be modulated. The intensity of the electric field determines the degree of conduction between the source and the drain.This makes the NVMSD6N303R2G MOSFET very useful in controlling power. In addition, the high speed switching, low voltage and low current consumption make it suited for use in a variety of applications. The device is capable of handling high frequencies, making it suitable for use in high-speed switching applications such as switching power supplies and integrated circuits.The NVMSD6N303R2G MOSFET is a high performance device offering fast switching speeds, low on-resistance and low voltage. It is well suited for automotive, LED lighting and switching applications requiring low power consumption and very fast switching times. The device is also capable of handling high frequencies, making it suitable for high speed switching applications. Overall, the NVMSD6N303R2G MOSFET provides an excellent combination of performance and reliability, making it an ideal choice for a wide range of applications.

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