NVMS5P02R2G Discrete Semiconductor Products

NVMS5P02R2G is a single field effect transistor (FET) specifically designed for applications in military, aerospace, and industrial environments. The device is suitable for use in power amplifier applications in which it provides superior switching speed and high power handling capability. It is also capable of operating in a wide range of temperatures, making it an ideal choice for a wide array of applications.The NVMS5P02R2G features a low on-resistance of only 240 mΩ and a maximum drain-source voltage of 60 V. This device is specially designed to operate in high temperature environments, up to a maximum junction temperature of 150°C, making it ideal for a wide range of industrial, military and aerospace applications. Furthermore, its wide operating range of -55°C to 150°C allows it to be used in severe conditions.The NVMS5P02R2G is a FET (Field Effect Transistor), which means it can be used as both an amplifier and a switch. As an amplifier, the device operates by using the electric field between the gate and the source to modulate the current. In other words, the current flowing between the drain and source changes depending on the voltage applied to the gate.When used as a switch, the FET acts as an on/off device, allowing the current to flow between the drain and source when a certain voltage is applied to the gate. This voltage is referred to as the threshold voltage, and when it is exceeded, the FET turns on and allows current to flow. The NVMS5P02R2G has a maximum threshold voltage of 5 V.In addition to its aforementioned features, the device also has a low gate charge, allowing it to switch faster than traditional FETs. This makes it ideal for applications where high switching speeds are required, such as with power amplifiers. The maximum gate charge of the NVMS5P02R2G is only 8 nC, making it one of the fastest FETs available on the market.Finally, the device has a high power handling capability, up to an absolute maximum drain current of 75 A, making it suitable for a wide range of power amplifier applications. The NVMS5P02R2G also has a high-frequency capability of up to 1 MHz, which makes it suitable for use in higher frequency applications.Overall, the NVMS5P02R2G is a highly versatile device that is ideal for a wide range of applications in military, aerospace and industrial applications. Its low on-resistance, high temperature range and fast switching speeds make it well suited for use in power amplifier applications, while its high frequency capability make it suitable for use in higher frequency applications.