NVTR0202PLT1G Discrete Semiconductor Products

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The NVTR0202PLT1G is a three-terminal, N-channel enhancement, silicon gate field effect transistor (FET). It is a member of the ON Semiconductor family of power MOSFETs.

This MOSFET is a single-gate electrostatically-controlled semiconductor device that utilizes free electrons as the main charge carriers. There are four source terminals (D, B, G, and S), one drain terminal (D), and one gate terminal (G). The source and gate terminals are used to control the flow of current through the device. The drain terminal is used to collect the current flowing through the channel when the gate voltage is applied.

The electrical characteristics of the NVTR0202PLT1G are defined by its breakdown voltage, threshold voltage, gate leakage current, gate capacitance, drain-to-source breakdown voltage, on-state resistance, maximum power dissipation, and transition frequency. The breakdown voltage specifies the voltage at which the FET can be safely operated without significant degradation in performance. The threshold voltage is the voltage at which the FET starts to conduct. The gate leakage current specifies the current that flows through the gate when it is not being used. The gate capacitance is a measure of the charge storage capacity of the FET and describes the switching speed of the FET. The drain-to-source breakdown voltage specifies the voltage at which the drain terminal will begin to conduct current. The on-state resistance describes the resistance of the FET when it is in its on state, and it is an important indicator of FET performance. The maximum power dissipation describes the maximum amount of power that the FET can handle without damage. The transition frequency is the frequency at which the FET can be switched with minimal losses.

The primary applications of the NVTR0202PLT1G MOSFET include switching, amplifying and computing applications. The device is widely used in power electronics, power management systems, industrial applications, automotive applications, and consumer electronics. It is also used in a variety of applications that require a reliable, low on-state resistance power switch such as switching power supplies, discrete control circuits, static relays, and direct pulse-width modulation control circuits.

The NVTR0202PLT1G MOSFET is a versatile device that offers excellent performance and reliability due to its high frequency switching, high breakdown voltage, low on-state resistance, and low gate leakage current. It also offers robust packaging, improved thermal resistance, and long-term reliability.

The working principle of the NVTR0202PLT1G MOSFET is based on the application of a low power electric field to create a conducting current channel between the source and drain. When a positive voltage is applied to the gate terminal, it creates an electric field that attracts the free electrons in the channel. This creates a conductive path from the source to the drain. When the gate voltage is removed, the electric field is removed and the FET stops conducting. The MOSFET can then be turned on and off with the gate voltage to control the flow of current through the device.

In conclusion, the NVTR0202PLT1G is a three-terminal, N-channel enhancement, silicon gate field effect transistor (FET) which is a member of the ON Semiconductor family of power MOSFETs. It is suited for a variety of switching, amplifying and computing applications due to its excellent electrical characteristics and its low on-state resistance. The working principle of the device is based on the application of a low power electric field to create a conducting current channel between the source and drain.

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