NVTR4503NT1G Allicdata Electronics

NVTR4503NT1G Discrete Semiconductor Products

Allicdata Part #:

NVTR4503NT1GOSTR-ND

Manufacturer Part#:

NVTR4503NT1G

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 1.5A SOT23
More Detail: N-Channel 30V 1.5A (Ta) 420mW (Ta) Surface Mount S...
DataSheet: NVTR4503NT1G datasheetNVTR4503NT1G Datasheet/PDF
Quantity: 3000
3000 +: $ 0.08966
Stock 3000Can Ship Immediately
$ 0.1
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 420mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NVTR4503NT1G is an N-channel ultra-low-capacitance ESD (electrostatic discharge) protection device. It is an advanced technology MOSFET (metal oxide semiconductor field-effect transistor) specially designed to have minimized capacitance for high speed signal protection applications. It has an excellent ESD transient immunity performance with an IEC 61000-4-2 air discharge level of 25kV and a contact discharge level of 15kV.

The application field of NVTR4503NT1G MOSFETs encompasses portable electronic devices, such as laptops and cell phones. The products can be used in various device interconnect interfaces, including USB, high-speed serial links, and HDMI. The common uses of the NVTR4503NT1G MOSFETs are in USB charging ports, where they provide ESD protection and ensure the safety of an electronic device by preventing voltage spikes and ensuring that the power supply is not damaged by greater-than-normal current.

The primary function of NVTR4503NT1G MOSFETs is to safely direct and store small amounts of electrical charge, allowing devices and circuits to be safely "connected" and "disconnected". The working principle of MOSFETs is based on the concept of charge coupled devices, which contain four interconnected "when-on" resistors. The resistors are connected to one another in a series of alternating diodes, allowing for the transfer of charge from one resistor to another. As the MOSFET is operated, the resistors in the four-terminal resistor charge and discharge in a manner dependent on the direction of current flow. When the direction of current flow is reversed (from source to gate, or vice versa), the flow is blocked, allowing the device to act as an electronic switch.

NVTR4503NT1G MOSFETs also feature low “Miller” capacitance and low leakage current, both of which are a result of their advanced process technology. The low Miller capacitance ensures that the gate signal is not distorted, while the low leakage current ensures protection against the build-up of static electricity and offers a degree of immunity from ESD events. Furthermore, NVTR4503NT1G MOSFETs have low power consumption and short switching times, which makes them ideal for high-speed applications such as USB ports.

In summary, NVTR4503NT1G MOSFETs are an excellent choice for fast switching applications in portable devices. They are designed for ultra-low capacitance with excellent ESD transient immunity, low Miller capacitance, and low leakage current. The devices have low power consumption and short switching times, making them ideal for applications such as USB ports, high-speed serial links, and HDMI.

The specific data is subject to PDF, and the above content is for reference

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