Allicdata Part #: | NVTR4502PT1GOSTR-ND |
Manufacturer Part#: |
NVTR4502PT1G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 1.95A SOT23 |
More Detail: | P-Channel 30V 1.13A (Ta) 400mW (Tj) Surface Mount ... |
DataSheet: | NVTR4502PT1G Datasheet/PDF |
Quantity: | 15000 |
3000 +: | $ 0.09994 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.95A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.13A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVTR4502PT1G is a single-channel N-channel enhancement mode MOSFET developed by ON Semiconductor. It is designed for applications where space is limited and power dissipation is important. The device is applicable to low frequency switching, DC-DC converters, and audio output and is widely used in communications, consumer electronics and industrial equipment. This article will provide a detailed look at the application field and working principle of the NVTR4502PT1G.
Features
The NVTR4502PT1G features low on-resistance, fast switching speeds and low gate thresholds. It has an integral body diode and an N-channel MOSFET, which are both enhancement mode devices. The gate is normally off and the device is in its non-conductive state. It can handle currents up to 500 mA (max), has a low on-resistance of 0.26 ohm at 4.5 V, and a breakdown voltage of 30V. The device also has a low input capacitance of 8.8 pF and a low gate charge of 5.5 nC.
Application Fields
The device can be used as a low frequency switch as it has a low-resistance off-state and can easily switch between low- and high-current states. It can also be used as an inverter or a buffer, due to its good current gain and low power consumption. The NVTR4502PT1G is also suitable for use in DC-DC converters as it has higher impedance and low gate charge. It is also used for audio output applications as it can handle high-frequencies with a low-noise output.
Working Principle
The NVTR4502PT1G works by passing or blocking current through its N-channel MOSFET. The integrated body diode assists in the reverse flow of current and helps protect the device from damage due to incorrect polarity. The device utilizes the three-terminal voltage-controlled arrangement, where the source terminal is at the same voltage potential as the body diode and the drain is at the same voltage potential as the gate terminal. This arrangement allows the device to be controlled by applying a positive or a negative voltage to the gate terminal, thus turning it “on” or “off”, thereby controlling the current flow between the source and drain terminals. The NVTR4502PT1G is an enhancement mode device and is normally in its off-state. The device turns “on” when a voltage is applied to the gate terminal, allowing current to flow through it.
Conclusion
The NVTR4502PT1G is a single-channel N-channel enhancement-mode MOSFET developed by ON Semiconductor. It is designed for low-frequency switching, DC-DC converters, and audio output applications. The device has excellent features such as low on-resistance, fast switching speeds, low gate thresholds, low input capacitance, and low gate charge. The device works by passing or blocking current to and from the N-channel MOSFET, which is controlled by applying voltage to the gate terminal. This article outlined the application field and working principle of the NVTR4502PT1G.
The specific data is subject to PDF, and the above content is for reference
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