NX7002AK,215 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-1289-2-ND |
| Manufacturer Part#: |
NX7002AK,215 |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 60V TO-236AB |
| More Detail: | N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Su... |
| DataSheet: |  NX7002AK,215 Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.01700 |
Specifications
| Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | TO-236AB (SOT23) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 265mW (Ta), 1.33W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 17pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.43nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 100mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 190mA (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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NX7002AK is part of the family of single field-effect transistors (FETs) developed by Faxitron. It is a monolithically integrated device that is used to control currents in a wide range of applications, including telecommunications, RF, power supplies and other industrial applications. The device\'s unique design makes it suitable for both DC and AC switching operations.The NX7002AK is a N-channel enhancement-mode FET that consists of a source, gate and drain regions. The device is formed on a lightly doped n-type substrate and the gate and source terminals are isolated with a thin oxide layer. This oxide layer provides a capacitive coupling between the gate and the source which results in an increase in the transconductance of the device.The FET operates in an enhancement-mode in which the device is normally off. This means that the device is not conducting until a certain voltage is applied between the gate and source terminals. The amount of voltage required to turn the device on or off is determined by the drain to source voltage (Vds) and the amount of gate voltage (Vgs) applied. When a certain Vgs is applied, the device will switch on, and the current through the device will increase. When the proper Vgs is applied, the device will switch off and the current flow through the device will decrease.The NX7002AK is designed for use in power conversions, switching power supplies and other AC/DC, DC/DC, and DC/AC applications. Its low-on resistance and low gate charge make it ideal for switching applications. The device\'s low gate to source capacitance is also beneficial in latching applications, such as switching power converters, since it results in reduced switching delays. The device can also handle reverse blocking voltages up to -100 volts.In summary, the NX7002AK FET is a highly reliable, low-power device suitable for a wide range of applications, including power management, RF switching, and telecommunications. Its unique design makes it suitable for both DC and AC switching applications. In addition, it features low on-resistances, low gate charges, and low gate to source capacitance, making it an ideal choice for applications requiring fast switching times and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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