NX7002BKMBYL Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2231-2-ND |
Manufacturer Part#: |
NX7002BKMBYL |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V SGL 3-DFN1006B |
More Detail: | N-Channel 60V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Sur... |
DataSheet: | NX7002BKMBYL Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.03767 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.8 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 23.6pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 350mW (Ta), 3.1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Package / Case: | 3-XFDFN |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NX7002BKMBYL is an advanced high performance transistor that is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology. The NX7002BKMBYL is one of the most common types of transistors in the single-gate MOSFET family. This transistor is used in a range of applications as a part of the power supply, switch mode power supplies, linear switch-mode power supplies, power amplifiers, power transistors, gate drivers, and other analog circuit applications.
The NX7002BKMBYL uses the basic MOSFET structure to control the device’s output voltage and its gate voltage. The entire process is driven by a source of electrons that pass through the device itself. This electric current creates an electric field in the conducting channels of a MOSFET device that then helps to determine the source of current drawn from the source of electrons, and thus the device’s output voltage. When the gate voltage of a MOSFET device is increased, the conducting channel is widened, which allows more electrons to pass through, and thus the output voltage is increased.
The NX7002BKMBYL is a snap-down type of MOSFET that is capable of providing extremely fast response times. This is achieved through the FET’s low input capacitance, which allows the device to respond to a given input quickly, thus allowing the device to rapidly switch between states. In addition, this device is also temperature compensated, allowing it to work in high temperature environments. The NX7002BKMBYL is also very efficient and consumes less power than other types of MOSFETs.
NX7002BKMBYL has a wide range of application fields that include ripple control systems, switch-mode power supplies and DC-to-DC power conversion systems, power amplifiers, power transistors, and gate drivers, linear switch-mode power supplies, and other analog circuit applications. This device is also widely used in fields such as telecommunications, computers, automotive industry, industrial systems and general purpose applications.
The working principle of the NX7002BKMBYL transistor is quite simple. The electric current is passed through the device, which in turn creates an electric field inside the device. The strength of the electric field then determines the amount of current passing through the device, and the electric field’s strength can be changed by altering the input voltage. This voltage is applied to the gate terminal of the device, which in turn affects the electric field within the device and thus the amount of current passing through it.
The NX7002BKMBYL is an efficient, reliable and versatile transistor with a wide range of applications. This device can be used in a variety of applications as its electric field can be easily changed by changing the gate voltage. This device is used in switch-mode power supplies, ripple control systems, DC-to-DC power conversion systems, power transistors, and gate drivers, linear switch-mode power supplies, and other analog electronics.
The specific data is subject to PDF, and the above content is for reference
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