NX7002BKR Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2663-2-ND |
Manufacturer Part#: |
NX7002BKR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 60V TO-236AB |
More Detail: | N-Channel 60V 270mA (Ta) 310mW (Ta), 1.67W (Tc) Su... |
DataSheet: | NX7002BKR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 270mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.8 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 23.6pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 310mW (Ta), 1.67W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The NX7002BKR is a single-channel enhancement mode N-Channel MOSFET transistor. It is designed to operate at a high level of efficiency when switching moderate to high power levels. The transistor is ideal for applications that require high frequency switching with low on-resistance (Rds-on), and with its small package it is a great choice for space-constrained designs.
One of the key features of the NX7002BKR is its thermal characteristics. It has a low thermal resistance, which allows for increased switching efficiency and improved operating temperature performance. In addition, its wide gate-source voltage range provides a great deal of flexibility in system design. It is available in a 5x6 mm package, making it well-suited for portable applications.
The NX7002BK is primarily used in integrated circuits (ICs) and power switching applications. It can be utilized as a switch, a linear amplifier, or an analog signal controller. Additionally, it is suitable for low power motor drives and voltage regulators. The device is also suitable for high current, low voltage applications, like DC-DC converters, as well as high voltage, high current applications, like switch mode power supplies.
The NX7002BKR has two basic configurations. In the dual-channel configuration, two transistors are working in parallel, and in the single-channel configuration, only one transistor is working. The single-channel configuration is often preferred for applications that require high speed switching, like power switching and DC-DC converters. The dual-channel configuration is more suitable for applications that require a lower speed of switching, such as analog signal controllers and linear visual amplifiers.
The working principle of the NX7002BKR is based on the MOSFET (metal-oxide-semiconductor field effect transistor) structure. It uses a gate-voltage to control the current flow between the drain and source terminal. When the gate voltage is applied, the transistor is turned on, and when it is reduced, the transistor is turned off.
In addition to its switching applications, the NX7002BKR can also be used as an amplifier. When its gate is subjected to a small input signal, the current between its drain and source terminals is amplified. This makes the NX7002BKR a great choice for communication systems and audio amplifiers. It can also be used in low-pass filters, precision rectifiers, and peak detectors.
The NX7002BKR is a versatile device with numerous applications. Its performance, size, efficiency, and thermal characteristics make it an ideal choice for a wide range of applications. Furthermore, its low on-resistance (Rds-on) makes it well-suited for high frequency switching.
The specific data is subject to PDF, and the above content is for reference
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