ON5200,118

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The ON5200,118 is an N-channel enhancement mode-type Metal Oxide Semiconductor FET (MOSFET) developed by ON Semiconductor and is designed as a Radio Frequency (RF) MOSFET transistor. This device is ideal for a variety of applications including but not limited to, high frequency power amplifiers, switching circuits, line drivers, and active protection circuits.

The ON5200,118 is manufactured using the company\'s proprietary Ion Beam Assisted Deposition (IBAD) polysilicon process. This process helps to improve the electrical characteristics of the device, enabling it to have higher frequencies with lower levels of noise, as well as improved linearity. Additionally, the device utilizes 200V Trench Gate Oxides which provides for better reliability and improved lifetimes.

The proprietary low-noise ERS-L technology used in the ON5200,118 also provides improved linearity, lower noise and higher performance compared to conventional devices. This technology also yields better heat dissipation characteristics, allowing for higher power dissipation and lower power consumption in radio frequency applications.

The ON5200,118 has a maximum drain current of 15 A, a maximum drain-source voltage of 47 V, and a maximum gate-source voltage of 15 V. The device also has a maximum operating temperature of 125°C. The device is also RoHS compliant.

The ON5200,118 is designed to provide improved RF performance in a variety of applications. This device may be used in a variety of power amplifier circuits to provide higher gains and better linearity than that of conventional devices. Additionally, the device can be utilized in active protection circuits, allowing for better control of devices within the circuit and improved circuit protection. Finally, the device\'s low-noise and low-power consumption make it well suited for use in line drivers, allowing for less distortion and better reliability in data transmission applications.

In addition to its wide range of applications, the ON5200,118 also has a few distinct working principles. The transistor relies on the flow of electrons between its source terminal and drain terminal in order to create a current across the device. This current is then modulated by a voltage applied to the gate terminal, which is used to control the amount of current flowing through the device. Additionally, the physical size of the device allows for better heat dissipation, allowing it to operate at higher power levels without the risk of thermal runaway.

In summary, the ON5200,118 is a reliable RF MOSFET transistor developed as a solution for a variety of applications requiring higher frequencies with lower levels of noise and improved linearity. It is manufactured using ON Semiconductor\'s proprietary IBAD polysilicon process and low-noise ERS-L technology, and is designed to provide improved RF performance in a variety of applications while also dissipating heat more effectively than conventional devices. Additionally, the working principle of the device is reliant on the flow of electrons between its source and drain terminals, which is then modulated by a voltage applied to the gate terminal.

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