ON5240,118

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A metal oxide semiconductor field effect transistor (MOSFET) is a type of field effect transistor (FET). MOSFETs are used for a wide range of applications, including power management, analog, and digital switching, and microelectronics. The ON5240,118 is a type of RF MOSFET researched and developed by ON Semiconductor. This MOSFET is designed for high-efficiency RF applications, such as power amplifiers, oscillators, and switches.

The ON5240,118 is a N-channel enhancement mode unipolar RF power MOSFET with an internal source-drain diode. The ON5240,118 can operate in both common source and common gate configurations. It is packaged in an industry-standard 4-lead SOT-223 package. The ON5240,118 features an efficient source-drain diode design, which increases its robustness, reliability, and performance in common source and common gate applications.

In common source configuration, the ON5240,118 can be used as an RF buffer amplifier or oscillator. In common gate configuration, the ON5240,118 can be used as an amplifier or switch. Due to its high input impedance, low noise output, and low operating temperature, the ON5240,118 is well suited for amplifier applications in RF frequencies up to 10 GHz.

The ON5240,118 has a gate-source breakdown voltage of 10 V and a blocking voltage of 45 V. It also features an Ic rating of 15 A and an output power of 2 W. The ON5240,118 also has a power gain of 13 dB at 10 GHz, and a power gain of 15 dB at 5 GHz.

The working principle of the ON5240,118 is quite simple. When a positive voltage is applied to the gate of the FET, a channel appears between the source and drain terminals. This channel allows electrons to flow from the source to the drain, creating a current. As the applied voltage increases, so does the current flowing through the FET. When the voltage is removed, the channel closes and the current ceases to flow.

The ON5240,118 is ideal for high-efficiency RF applications due to its low gate-to-source capacitance and gate-source turn-off time. It is also well suited for RF switching and buffering applications, as it can be used with very low input signal levels, in both common source and common gate configurations. With its low operating temperature, the ON5240,118 can also be used in high-temperature environments, such as in automotive and military applications.

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