ON5223,118

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ON5223,118 application field and working principle

ON5223,118 is a RF power MOSFET of the Lateral N-Channel Enhancement type. It is characterized with a high frequency, high gain, and low power dissipation.

Its application fields comprise high frequency switching, high efficiency amplifiers, linear amplifiers, antenna amplifiers, and other related applications. The device finds use in mostly military and commercial applications that require high frequency, high gain, and low power switching.

The ON5223,118 MOSFET is composed of 9MosFET N-channels. Each δ gate voltage is applied to the gate, and a specified voltage bias is applied between drain and source. Voltage applied to the gate, and the applied drain-source voltage bias will cause current flowing between drain and source pins. The amount of current which can be driven by this MOSFET increases exponentially with the applied gate, and drain-source voltage bias.

The working principle of the ON5223,118 is based on the effective electron mobility of the channel’s electrons. A signal applied to the gate terminal, causes a band of electrons to move along the surface of the silicon substrate. The energy of the signal causes an amplification of electrons with the delta gate voltage, creating an effective channel region conductive for current. This effect is enhanced by the voltage bias, apply between the drain and source pins, across the channel.

Therefore, by applying a small voltage to the gate, and a moderate voltage bias between drain and source, the same transistors configurations can increase the power handling capability of the MOSFET dramatically. This allows us to switch high frequencies, low power dissipation and high gain.

Thanks to their sensitive switching properties, small size and considerable operational reliability, these devices are widely used in a variety of RF applications, including high frequency switching, transmitters, receivers, filters, amplifiers, and oscillators. In addition, these devices are used in RF power applications where efficiency and high frequency operation are of concern.

In conclusion, ON5223, 118 is a RF Power MOSFET which has excellent properties for many applications requiring high frequency, high gain and low power switching. It is also highly reliable, offering considerable operational reliability in RF power applications where efficiency and high frequency operation are of concern.

This article has been categorized as Transistors - FETs, MOSFETs - RF.

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