Allicdata Part #: | ON5250,135-ND |
Manufacturer Part#: |
ON5250,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET RF SOT223 SC-73 |
More Detail: | RF Mosfet SOT-223 |
DataSheet: | ON5250,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | -- |
Frequency: | -- |
Gain: | -- |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | -- |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
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A 5250,135 Application Field and Working Principle
5250,135 is a type of power MOSFET (metal-oxide-semiconductor field-effect transistor) that is used for radio-frequency (RF) applications. It is a wideband device with a low input capacitance. The 5250,135 is capable of handling up to 1 watt of power and can be used in a variety of applications.
The 5250,135 is a highly efficient transistor that can be used as an amplifier or switch in radio-frequency (RF) circuits. It is a current-controlled device, which means that the current through it can be adjusted using a control voltage. The transistor is capable of operating over a wide range of frequencies, from a few kilohertz up to hundreds of megahertz. Additionally, the 5250,135 has a very low input capacitance and low turn-on voltage making it ideal for use in high-gain, high-frequency applications.
When used as an amplifier, the 5250,135 transistor is biased in the FET (field effect transistor) region. This means that the voltage applied across the gate and source terminals controls the current through the device. As the voltage applied to the gate terminal changes, the current through the device changes correspondingly. The current through the device can then be used to amplify an electrical signal.
When used as a switch, the device can be driven at either its cutoff frequency or its saturation frequency. When operated at the cutoff frequency, the device is in its off state and no signal will be amplified or switched. At saturation, however, the transistor is in its on state and the current can be ramped up, amplifying or switching the signal. The transistor is also capable of being driven at frequency points that are in between its cutoff and saturation frequencies, allowing for control of the current level. This allows the transistor to be used for a variety of switching applications.
The 5250,135 is an excellent device for radio-frequency applications. Its low input capacitance and low turn-on voltage make it ideal for high-gain, high-frequency applications. Additionally, it has excellent power handling capabilities and can be used as either an amplifier or switch. With its wide range of frequencies and current control, the 5250,135 is a versatile device for many radio-frequency projects.
The specific data is subject to PDF, and the above content is for reference
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