Allicdata Part #: | ON5402,518-ND |
Manufacturer Part#: |
ON5402,518 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET RF 8SOIC |
More Detail: | RF Mosfet 8-SO |
DataSheet: | ON5402,518 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | -- |
Frequency: | -- |
Gain: | -- |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | -- |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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ON5402,518 is an RF MOSFET manufactured by ON Semiconductor, a leading independent technology supplier. It is a high-power device, with an drain-source breakdown voltage of 500V and an operating temperature range of -55 to +150 °C.
ON5402,518 is typically used in high-frequency power applications, such as amplifiers, oscillators and tuners. It can be used in applications that require low distortion and high linearity, such as video and cable modulation circuits. It is also suitable for use in frequency agile radio applications as it offers fast switching times.
The device is a Enhancement Mode, N-Channel MOSFET and it operates by passing current through the channel between the source and the drain. When a positive voltage is applied to the gate, it pulls charge carriers into the channel and the device turns ‘on’, allowing current to flow. When the gate voltage is removed, the device turns ‘off’, and current no longer flows.
ON5402,518 is an usually a better choice for RF applications than a regular MOSFET due to its high drain-source breakdown voltage and large breakdown voltage-to-gate voltage ratio. This makes it more resistant to gate charge related effects, such as Miller and Knoop effects.It also boasts a low gate-drain capacitance which helps reduce unwanted resonance and improve linearity.
ON5402,518 can be used for a wide range of RF power applications such as power amplifiers in mobile phones, television transmitters and radio base stations. It is well suited for use in RF power devices because it has a higher thermal performance than most bipolar transistors, enabling it to handle higher powers. It also has a fast switching time, making it suitable for use in radio base-stations where faster switching is required to satisfy frequency agility requirements.
ON5402,518 is typically used in medium power RF applications, such as medium power amplifiers and oscillators, as it has a low drain-source on-state resistance. This helps reduce the losses in the device, allowing the amplifier to have better accuracy and higher efficiency. The device also has a high-frequency performance, making it suitable for use in High Frequency (HF) applications such as TV tuners.
In conclusion, ON5402,518 is a RF power MOSFET device from ON Semiconductor, suitable for a wide range of RF applications. It is well suited for use in applications that require low distortion, high linearity and high power. It features a high thermal performance, low gate-drain capacitance and low drain-source on-state resistance, making it a great choice for RF power applications.
The specific data is subject to PDF, and the above content is for reference
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