Allicdata Part #: | ON5421,127-ND |
Manufacturer Part#: |
ON5421,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET RF TO220AB TO220AB |
More Detail: | RF Mosfet TO-220AB |
DataSheet: | ON5421,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | -- |
Frequency: | -- |
Gain: | -- |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | -- |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The ON5421,127 is a type of field-effect transistor (FET) that can be used for applications such as power amplification or high-frequency switching circuits. It is classified as an RF (Radio Frequency) FET, which means that it can be used for radio frequency applications such as wireless communication. In this article, we will discuss the ON5421,127\'s application field and its working principle.
Application Field
The ON5421,127 can be used in a variety of applications, including power amplifiers, amplifier stages, switching and oscillator circuits. It is suitable for applications such as high-power radio frequency amplifiers, high-frequency switching circuits, and low-noise amplifier stages. The operating frequency range is typically from 20 mHz to 300 mHz. In addition, it can also be used in oscillators, power amplifiers and audio frequency amplifiers. It is designed to provide high gain and low distortion over a wide frequency range.
Working Principle
The ON5421,127 is a n-channel FET which is based on metal-oxide-semiconductor (MOS) technology. It consists of a metal gate, a source and a drain. The source and drain are connected to the metal gate to form the transistor characteristics. As voltage is applied to the gate, it creates a field that induces charge carriers in the channel between the source and the drain. This results in a current flow between the source and the drain, thus allowing the ON5421,127 to amplify signals. The ON5421,127 is designed to be able to drive higher currents than a typical MOSFET, which makes it suitable for higher power applications.
The ON5421,127 has a low on-resistance and a low gate-source capacitance. This makes it a low-losses and efficient FET, which is suitable for high-frequency signals and fast switching applications. The device is also designed for low-noise operation, making it suitable for audio and video applications that require low-noise and low distortion. In addition, the device is designed for high-power and high-temperature applications, meaning that it can operate at temperatures up to 200°C. This makes it suitable for applications such as RF amplifiers, pulse circuits and automotive applications.
Conclusion
The ON5421,127 is a type of FET that can be used for a variety of applications, including power amplifiers, amplifier stages, switching and oscillator circuits. It is an RF FET, which means that it can be used for radio frequency applications. The device is designed to provide high gain and low noise operation and can operate at high temperatures. It is suitable for applications such as RF amplifiers, pulse circuits and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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