ON5448,518

The ON 5448 and the 518 are two types of field effect transistors (FET) designed to be used in radio frequency (RF) applications. Both transistors have a drain-source voltage capability of up to 24 volts and can be used in RF systems operating at frequencies up to 500 MHz.

The ON 5448 is a depletion mode MOSFET, meaning that it has a low off-state resistance, allowing it to be operated in an unconditionally stable state. The 518 is an enhancement mode MOSFET, allowing it to have a higher resistance in its off-state than the ON 5448, but also allowing it to have higher gain and higher output power when compared to depletion mode transistors.

The primary difference between the two transistors is their working principle. The working principle of the ON 5448 is based on the amount of charge stored in the gate of the transistor. When a voltage is applied to the gate, a small electric field is created, which causes charges to be attracted to the gate. This creates an inversion layer near the surface of the gate and enables current to flow from the source to the drain.

The working principle of the 518 is based on the bandgap of the material used as the gate. When a voltage is applied to the gate, the electrons in the gate material become excited, creating a larger bandgap. As the bandgap increases, more electrons are able to cross the gap, which increases the current and enables current to flow from the source to the drain.

The ON 5448 and the 518 are primarily used in applications such as high-frequency amplifiers, mixers, oscillators, and frequency-division multiplexers (FDDM). They can also be used in other applications such as phase-locked loops (PLL) and voltage-controlled oscillators (VCO).

The ON 5448 and the 518 are both highly reliable, efficient transistors, and have been used in a wide range of applications. They are both able to handle high drain-source voltage and have a high maximum allowable power dissipation, making them an ideal choice for RF applications. They are also ideal for low-noise and low-power applications, as they are able to operate at lower voltages than other FETs.