Allicdata Part #: | ON5453,518-ND |
Manufacturer Part#: |
ON5453,518 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET RF 20SOIC |
More Detail: | RF Mosfet |
DataSheet: | ON5453,518 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | -- |
Frequency: | -- |
Gain: | -- |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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The ON5453,518 is a field-effect transistor (FET) specifically designed for use in radio-frequency (RF) applications. As a FET, it is a type of transistor that controls the electrical current or voltage passing through a channel between the source and drain. However, it is different from other transistors because the current or voltage between the source and drain is controlled by an electric field. FETs like the ON5453,518 work differently than other types of transistors as they rely on two primary principles that make them more reliable in RF applications: electrostatic shielding and gate control.
The electrostatic shielding principle is the idea that an electric current can be applied externally and separated from the device or system used to control it. This provides an interference-free link between the source and drain, reducing the effects of noise and other interference on the signal. This allows for greater reliability.
The second principle utilized in FETs like the ON5453,518 is gate control. This principle relies on a channel between the source and drain where an electric field is generated by a gate voltage, controlling the flow of current or voltage through the device. This type of control allows for greater control over the signal, allowing for better performance and lower noise levels in RF applications.
The ON5453,518 is made up of a variety of components, the most notable being a field-effect transistor. This particular FET is designed with a number of features to make it more suitable for use in RF applications, such as high-frequency stability, no thermal drift, and high power handling capability. In addition, the ON5453,518 also has a wide range of available operating voltages, allowing it to be used in a variety of applications.
To summarize, the ON5453,518 is a field-effect transistor specifically designed for use in radio-frequency applications. It works on two primary principles, electrostatic shielding and gate-control, which provide better noise reduction and signal performance. It is composed of several components and has a wide range of available operating voltages, making it suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
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