PDTA114EU,115 Allicdata Electronics

PDTA114EU,115 Discrete Semiconductor Products

Allicdata Part #:

1727-6272-2-ND

Manufacturer Part#:

PDTA114EU,115

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA114EU,115 datasheetPDTA114EU,115 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.01990
6000 +: $ 0.01796
15000 +: $ 0.01561
30000 +: $ 0.01405
75000 +: $ 0.01249
150000 +: $ 0.01041
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 180MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PDTA114
Description

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Transistors are an important component of electronics commonly used to amplify signals. PDTA114EU,115 is a type of transistor in the bipolar junction transistor (BJT) family. It is a single, pre-biased device designed for use in many common applications.

A bipolar junction transistor is a semiconductor device that has three layers of doped semiconductor material. It has two PN junctions. The layers are as follows: An emitter layer, a base layer, and a collector layer. The collector and emitter are on opposite sides of the base layer and when a charge is applied, current flows between them. This is the principle by which transistors amplify signals.

The PDTA114EU,115 is a pre-biased single transistor with a collector-emitter voltage (VCE) of 5V and a base-emitter voltage (VBE) of 2V. It has a maximum current gain of 100 and a bandwidth of 16MHz. It is designed for a wide range of applications including amplifiers, audio and video switching, wired communications, avionics, and more.

The PDTA114EU,115 is designed with a robust architecture that allows it to perform well in a variety of environments. It is capable of handling high temperatures with little to no degradation in performance and has very low levels of power consumption. Additionally, the PDTA114EU,115 is well suited for repeated on-off switching which has been shown to increase its longevity. Thanks to its pre-biased design, the PDTA114EU,115 is well suited for use in situations where quick power-up and power-down is required.

The PDTA114EU,115 is ideal for use in a wide variety of applications including amplifiers, audio and video switching, wired communications, avionics, automotive, and more. Its wide bandwidth, robust architecture, and pre-biased design make it an excellent choice for any of these applications. Its versatility and durability makes it especially well suited for automotive and avionics applications.

The PDTA114EU,115 is an excellent choice for any application requiring amplification, switching, or wired communications. Its pre-biased design and robust architecture make it well suited for a wide range of uses. With its high current gain, wide bandwidth, and low power consumption, the PDTA114EU,115 is sure to meet any requirement.

The specific data is subject to PDF, and the above content is for reference

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