PDTA143XE,115 Allicdata Electronics
Allicdata Part #:

PDTA143XE,115-ND

Manufacturer Part#:

PDTA143XE,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 150MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA143XE,115 datasheetPDTA143XE,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
Base Part Number: PDTA143
Description

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The PDTA143XE,115 is a single, pre-biased bipolar transistor designed to operate across a broad range of current, voltage, and temperature conditions. It uses a Schottky diode and NPN transistor in the same package, while still providing the same input and output characteristics as discrete devices.

This device is specifically designed to handle higher power applications while still being compact in size. It offers superior performance in applications such as RF, digital and analog switching, high speed switching and pulse circuits, high power audio amplifiers, as well as power control and protection circuits. Additionally, this all-in-one pre-biased transistor is highly efficient and economical because it eliminates the need for separate discrete components.

The PDTA143XE,115 is a versatile device due to its unique design. It has high forward current, low input resistance, and fast switching time. The collector current rating of this device is up to 30 milliamps (mA) and the voltage rating is up to 40 volts (V). Furthermore, the PDTA143XE,115 maintains consistent on-state behavior across multiple temperature conditions (e.g., from -40°C to +105°C). This makes it suitable for use in many applications, including automotive and industrial.

The working principle of the PDTA143XE,115 is based on an NPN bipolar transistor. This type of transistor involves three main parts: the emitter, base, and collector. The emitter and collector are connected to the power source, while the base is connected to a control circuit. The current flowing between the emitter and the collector is controlled by the base current, which is set by the control circuit. When the voltage is high between the base and the emitter, the transistor allows current to flow from the collector to the emitter. On the other hand, when the voltage is low, the transistor closes and doesn’t allow current to flow.

The PDTA143XE,115 is a great solution for many applications including RF and digital switching circuits, DC power control and voltage regulation, audio amplifiers and more. Its unique design and superior performance make it an ideal choice for engineers who need a reliable and high performance device for their projects.

The specific data is subject to PDF, and the above content is for reference

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