PDTA143XQAZ Allicdata Electronics
Allicdata Part #:

PDTA143XQAZ-ND

Manufacturer Part#:

PDTA143XQAZ

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 3DFN
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA143XQAZ datasheetPDTA143XQAZ Datasheet/PDF
Quantity: 1000
5000 +: $ 0.02514
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 180MHz
Power - Max: 280mW
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Description

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The PDTA143XQAZ transistor is a type of single, pre-biased bipolar transistors (BJT). It is an ideal choice for designing power circuits with fast switching speeds, low power dissipation, and the ability to withstand high temperatures. It is a relatively small size, yet still offers high current gain and low on-state resistance; both of which are important considerations when designing power circuits.

The PDTA143XQAZ is an NPN type power transistor. It is constructed using a planar-diffused planar silicon substrate to form its electrical circuit. Pre-biased types of transistors such as the PDTA143XQAZ already have a base-emitter potential, so no further bias is necessary. This allows for faster switching and lower power dissipation with this particular transistor.

The PDTA143XQAZ is most commonly used in power applications such as in switching power supplies for audio equipment, motor controllers, small appliances, DC motors and the like. It is also a suitable choice for other low and medium power applications, such as small-signal amplifiers, switching circuits and analog signal processing.

The PDTA143XQAZ is a silicon power transistor with a max collector current rating of 14A and a continuous collector current of 6A. It has a low collector-emitter saturation voltage and a high power dissipation capability. Its operating temperature range is -65 to +150 oC. It has a standard TO-220F package which simplifies mounting.

The PDTA143XQAZ works based on the concept of majority carrier injection which allows for faster switching speeds and high current gains. This is achieved by inject electrons into the base and holes into the collector in order to cause an avalanche breakdown. This current-modulated mechanism, along with the efficient heat sink and wide temperature range, allows for low dissipation and higher gains in power applications.

The PDTA143XQAZ also features a built-in temperature compensation and short-circuit protection. The compensation reduces the frequency of oscillations when temperature changes, and the short-circuit protection ensures that no damage or permanent degradation is caused to the device in the case of an unexpected short-circuit.

The PDTA143XQAZ offers several advantages, primarily due to its fast switching speed and power efficiency, but also due to its low thermal resistance, robust performance, compact size and wide operating temperature range. Its pre-biased design also eliminates the need for further bias, which makes it a convenient choice for most power applications.

The ease of installation and maintenance are also an advantage of the PDTA143XQAZ, as it simplifies mounting due to its standard TO-220F package. All these features make it a highly efficient, reliable and cost effective choice for a wide variety of power applications.

The specific data is subject to PDF, and the above content is for reference

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