
PDTA115TE,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-2111-2-ND |
Manufacturer Part#: |
PDTA115TE,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS PNP 150MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Base Part Number: | PDTA115 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PDTA115TE (N-Channel Depletion Mode MOSFET) is a type of semiconductor which can be classified under the Transitors - Bipolar (BJT) - Single, Pre-Biased category. It is commonly used in low side switching, motor controllers, and motor speed controllers.
PDTA115TE is composed of a P-type gate and an N-type source. This combination of components allows the MOSFET to maintain its high input impedance while driving high current through its drain. The PDTA115TE has an integrated reverse-biased Schottky diode to protect against inductive spikes, and a logic level gate input to reduce power consumption.
The principal advantage of the PDTA115TE is its ability to function both as a normally-on and normally-off switch depending on the voltage applied to its gate. Unlike a BJT, the PDTA115TE does not require a bias voltage to enable conduction between the source and the drain. This makes it ideal for low side switching applications where a continuous current must be passed from the load to the source.
The PDTA115TE is available in an SOIC-8, 0.8mm pitch low profile package, with a range of power capabilities up to 115A with VGS of 10V and a maximum operating temperature of Tj=175°C.
In terms of application fields, the PDTA115TE can be used in DC motors, electric vehicle controllers, and brushed and brushless motor controllers. It can also be used in variable speed control, frequency modulation and other variable frequency applications. The PDTA115TE’s low on-resistance and high power handling capability make it ideal for low side switching applications.
The working principle of the PDTA115TE is based on the basic transistor principle. When a voltage is applied to the gate, a depletion region is formed in the channel below the gate, allowing current to pass from the source to the drain. As the gate voltage is increased, the depletion region increases in size, allowing more current to flow through the MOSFET. Conversely, when the gate voltage is decreased, the depletion region decreases in size, reducing the amount of current that can pass through the MOSFET.
The PDTA115TE is a versatile transistor that can be used in a variety of low side switching applications. Its ease of use and low power consumption make it an attractive choice for applications that require a reliable switch. The PDTA115TE is a reliable solution for controlling motors, climate control systems and other actuators with precision control.
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Part Number | Manufacturer | Price | Quantity | Description |
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PDTA143XE,135 | NXP USA Inc | 0.0 $ | 1000 | TRANS PREBIAS PNP 150MW S... |
PDTA144EU,135 | Nexperia USA... | 0.01 $ | 1000 | TRANS PREBIAS PNP 200MW S... |
PDTA124XK,115 | NXP USA Inc | 0.0 $ | 1000 | TRANS PREBIAS PNP 250MW S... |
PDTA144EK,135 | NXP USA Inc | 0.0 $ | 1000 | TRANS PREBIAS PNP 250MW S... |
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PDTA144TM,315 | Nexperia USA... | 0.02 $ | 1000 | TRANS PREBIAS PNP 250MW S... |
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