Allicdata Part #: | PDTA123TMB,315-ND |
Manufacturer Part#: |
PDTA123TMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA123TMB,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05332 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 180MHz |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Base Part Number: | PDTA123 |
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The PDTA123TMB,315 is a part of a family of single, pre-biased transistors. Specifically, they\'re bipolar junction transistors (BJT). This family of transistors is designed to have different operating voltages, current densities, and power dissipation making it suitable for multiple applications. This article will discuss the application field and working principle of the PDTA123TMB,315.
Application Field
The PDTA123TMB,315 transistor is primarily used for low-frequency analog circuits. It\'s well-suited for use in amplifiers, audio amplifiers, active filters, voltage regulators, and current sources. It is also used as an interfacing device between digital circuits and analog systems.
As a pre-biased transistor, the PDTA123TMB,315 is especially useful for applications that require a fast turn-on and high current capacity. Its wide range of operating voltages (3-15V) make it ideal for a variety of systems and devices.
Working Principle
The PDTA123TMB,315 is a bipolar junction transistor with NPN configuration. It consists of an emitter, base, and collector where electrons flow from the emitter to the collector after passing through the base. The transistor is designed with a built-in biasing resistor and sets the current flow with a voltage.
The PDTA123TMB,315 has a current gain (hFE) of 160 and a maximum collector current of 125 mA. It has a maximum collector-emitter voltage of 75V and a maximum power dissipation of 15W.
The PDTA123TMB,315 can be used to control the current between the base and the emitter by applying a voltage to the base. When the voltage applied to the emitter increases, the current flow between the emitter and collector will also increase. This allows the current to be controlled according to the voltage applied to the base.
Conclusion
The PDTA123TMB,315 is a single, pre-biased transistor. It is mainly used for low-frequency analog circuits such as amplifiers, audio amplifiers, active filters, voltage regulators, and current sources. It has a high current gain, maximum collector current, collector-emitter voltage, and power dissipation. Its wide range of operating voltages makes it suitable for use in a variety of devices and systems. Its built-in biasing resistor allows for fast turn-on and high current capacity.
The specific data is subject to PDF, and the above content is for reference
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