Allicdata Part #: | 1727-5128-2-ND |
Manufacturer Part#: |
PDTA124ET,215 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA124ET,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.01990 |
6000 +: | $ 0.01796 |
15000 +: | $ 0.01561 |
30000 +: | $ 0.01405 |
75000 +: | $ 0.01249 |
150000 +: | $ 0.01041 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PDTA124 |
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The PDTA124ET,215, is a single pre-biased transistor in the bipolar junction transistor (BJT) family, which has a range of uses in many different applications and processes.
BJT transistors are an essential part of many integrated circuits, and they are the most widely used type of transistor in modern electronics. The PDTA124ET,215, is a member of the family of BJT transistors, and is pre-biased, which means that the base-emitter voltage is set, so that the transistor is ready to be used and can operate correctly as soon as power is applied to it. The pre-bias of the transistor is also known as its threshold voltage, and this is set by the manufacturer during the production process.
One of the main advantages of using a pre-biased transistor is that it can be easily integrated into complex circuits, allowing engineers to reduce the time and energy needed to build a functioning circuit. It is also a powerful and efficient way to switch on and off electronic circuits, as the power and current can be easily modulated by adjusting the base-emitter voltage. Additionally, these transistors are designed to have a low threshold voltage, meaning that they can be used to detect very faint signals and currents, allowing engineers to design circuits with a wide range of sensitivity.
The PDTA124ET,215, is a type of NPN transistor, which means that it is composed of three layers of semiconductor material, a P-type layer, an N-type layer, and another P-type layer. The P-type material has a a positive charge, while the N-type material has a negative charge, and the two are combined to form a PN junction. When the base voltage is applied, electrons start flowing through the N-type material and holes start flowing through the P-type material, creating a current that can be used to switch on and off a circuit.
The PDTA124ET,215 transistor is used in a wide variety of applications, including amplifiers, signal processing circuits, and radio frequency circuits. This type of transistor is also often used in sensing applications, as its voltage and current modulation capabilities make it ideal for detecting faint signals and currents. It can also be used in power supplies and switching circuits, as it is designed to handle large amounts of power and current.
In summary, the PDTA124ET,215 is a single, pre-biased BJT transistor, which has many different uses, including signal processing, power supplies, and sensing applications. It is composed of three layers of P-type and N-type semiconductor material, and it has a pre-set base-emitter voltage, which makes it ideal for use in complex circuits. Thanks to its high power and current handling capabilities, as well as its ability to detect faint signals, it is an essential part of many modern electronic designs.
The specific data is subject to PDF, and the above content is for reference
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