PDTA124XE,115 Allicdata Electronics
Allicdata Part #:

PDTA124XE,115-ND

Manufacturer Part#:

PDTA124XE,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 150MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA124XE,115 datasheetPDTA124XE,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
Base Part Number: PDTA124
Description

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The PDTA124XE,115 is a PNP-type single pre-biased transistor useful in both small-signal and high-power applications. It is designed to operate over a pre-determined bias point to reduce energy consumption, which makes it an efficient solution for applications where energy efficiency is critical. The device has an excellent gain bandwidth product (fT) and is capable of providing high gain and low noise. It is also highly reliable, with a minimum MTTF rating of ≈20 years.

The PDTA124XE,115 has an NPN-type collector current rating of 150 mA, with a maximum collector-base voltage of 30 V. The device also has a maximum collector-emitter voltage of 40 V and a minimum of -50 V. It is specifically designed for use in circuits requiring high voltage capability and low input stages. The device is rated for operating temperatures up to 175°C.

The PDTA124XE,115 has a wide range of applications, including analog and digital circuits, audio amplifiers, video amplifiers, inverters, multivibrators and DC-DC converters. It can also be used in the output stages of power amplifiers, data converters, pulse clippers and other power electronics. It is suitable for use in both switching and linear applications, allowing it to be used in a wide range of applications. Additionally, it is able to operate over a wide range of input and output voltages.

The working principle of the PDTA124XE,115 is based on the combination of an NPN-type junction field-effect transistor (JFET) and an insulated-gate bi-polar transistor (IGBT). The NPN-type JFET operates as the control element of the device, while the IGBT acts as the power element. Together, these two transistors form a single pre-biased transistor, with the JFET controlling the IGBT, thus controlling the flow of current in the device. When the NPN-type JFET turns off, the IGBT is then turned off as well, thus controlling the flow of current in the device. This allows the device to maintain a steady voltage across its terminals and thus, a constant output voltage.

The PDTA124XE,115 is an ideal solution for applications requiring high performance and energy efficiency. It has a wide range of applications and can operate over a wide range of input and output voltages. Additionally, it is highly reliable and has a minimum MTTF rating of ≈20 years. It is also capable of providing high gain and low noise, making it an excellent choice for applications where power efficiency is critical.

The specific data is subject to PDF, and the above content is for reference

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