PDTA114TU,115 Allicdata Electronics

PDTA114TU,115 Discrete Semiconductor Products

Allicdata Part #:

1727-1689-1-ND

Manufacturer Part#:

PDTA114TU,115

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA114TU,115 datasheetPDTA114TU,115 Datasheet/PDF
Quantity: 2260
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 0.11340
10 +: $ 0.10584
100 +: $ 0.05746
500 +: $ 0.03537
1000 +: $ 0.02411
Stock 2260Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Cut Tape (CT) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Description

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PDTA114TU and 115 are single, pre-biased transistors that are also referred to as Bipolar Junction Transistors (BJT). This type of transistor is used to switch, amplify, and regulate electrical signals. They are used in a wide variety of applications, such as radio receivers and amplifiers, digital computers, switching, and power control.

The PDTA114TU and 115 transistors are two-terminal devices with three layers, each of which is composed of a different type of semiconductor material. When one of these layers, referred to as the base, is connected to a voltage source with the correct polarity and an adequate current, it will cause current to flow from the emitter to the collector, thus turning the transistor “ON”.

To ensure the best performance of a pre-biased transistor, it is important to match the device’s characteristics to the circuit’s requirements. The characteristics that must be considered include the temperature coefficient of forward current gain (α FE ), the collector-emitter voltage (V CE ), the forward current gain (h FE ), and the input resistance. These parameters must all be in balance to avoid overdriving, underdriving, or other undesirable results.

The working principle of a pre-biased transistor is based on the changes in the junction current and the device’s base-emitter voltage (V BE ). When the junction current is low, the V BE is approximately zero, and the collector current (I C ) is limited by the external circuit. When the junction current increases, V BE rises, and the current gain increases as well. This increases I C until it reaches its maximum value, which is determined by the external circuit.

The PDTA114TU and 115 can be used in a variety of applications, including power control, amplifiers, oscillators, switching, and radio receivers and transmitters. In addition, these transistors can also be used in circuits requiring high-speed switching and low voltage operation. These devices are fast-switching, relatively inexpensive, and can be integrated into smaller and more compact circuits.

In summary, PDTA114TU and 115 are single, pre-biased Bipolar Junction Transistors. These type of transistor is used to switch, amplify, and regulate electrical signals in a wide variety of applications. When designing with pre-biased transistors, it is important to match the device’s characteristics to the circuit’s requirements to ensure the best performance. These devices have a wide range of uses and can be used in a variety of applications requiring fast-switching, low voltage operation.

The specific data is subject to PDF, and the above content is for reference

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