PDTA114YU,115 Allicdata Electronics
Allicdata Part #:

PDTA114YU,115-ND

Manufacturer Part#:

PDTA114YU,115

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA114YU,115 datasheetPDTA114YU,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01990
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PDTA114
Description

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Bipolar Junction Transistors are one of the most widely used type of transistors and represent a key component within a variety of electronic circuits. The PDTA114YU,115 is a single pre-biased Bipolar Junction Transistor (BJT) and is a component of the PDTA1xx series of transistor products from Philips Semiconductors. This article will provide an overview of the applications and working principles of the PDTA114YU,115.

One important advantage of pre-biased transistors is that less circuitry is required as the bias of the device is already set to a specific level. This means that the transistor does not require external bias circuits to operate, as all the preset bias settings are maintained within the PDTA114YU,115. For example, the PDTA114YU,115 has a forward bias voltage setting of 10V and a reverse bias voltage setting of 5V. Thus, the PDTA114YU,115 is ideal for applications where physical size or power budget is of particular importance.

A further advantage of the PDTA114YU,115 is its simple working principle. The device is based upon a junction between two polarised materials - an N-type material and a P-type material. When a voltage is applied to the base of the transistor, it creates a flow of current between the collector and the emitter. This flow of current is designed so that is amplifies the signals passing through the transistor, allowing for more efficient signal switching.

The actual application fields for the PDTA114YU,115 are quite broad. Due to its simple construction, its uses range from functional capabilities such as power control, voltage regulation and amplification. Additionally, the PDTA114YU,115 is also frequently used for sensors and other low-power applications. In both cases, the advantage of the pre-biased nature of the transistor allows for more efficient designs which require far less current than traditional BJT components.

In conclusion, it is clear that the PDTA114YU,115 is one of the most versatile and reliable single pre-biased BJT available on the market. Its pre-biased nature simplifies the circuitry used in applications that require the device and makes it well suited for both low-power applications such as sensors, as well as more demanding circuits that require high speed switching and amplification. Therefore, for anyone who requires a reliable transistor with preset bias voltage settings the PDTA114YU,115 is definitely worth considering.

The specific data is subject to PDF, and the above content is for reference

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