PDTA124EQAZ

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PDTA124EQAZ is a single, pre-biased, bipolar junction transistor (BJT). The PDTA124EQAZ is a popular choice for transistor applications in telecommunications and consumer electronics systems, due to its high performance, robustness and low power consumption. In this article, we will discuss the application field and working principle of the PDTA124EQAZ.

Application Field of PDTA124EQAZ

The PDTA124EQAZ is primarily used in telecommunications and consumer electronics systems. It is a radio-frequency (RF) switching element that enables efficient control of RF signal paths in cellular, Wi-Fi and digital multimedia broadcasting (DMB) networks. It is also used in cordless phone systems, remote keyless entry, and other wireless systems.

The PDTA124EQAZ is also suitable for the manufacture of ultra-low-voltage (ULV) signal switching circuits, such as those required by ultra-low-power, battery-powered circuiry. The PDTA124EQAZ is an ideal choice for direct driving of active-matrix liquid-crystal displays (AMLCDs) and video-signal amplifier (AMPA) circuits. It is used in a post motor control stages of motor control systems, such as washing machines and television motors.

Working Principle of PDTA124EQAZ

The PDTA124EQAZ consists of three terminals: the base, collector, and emitter. In the PDTA124EQAZ, current flows from the base terminal to the collector terminal. The amount of base current controls the amount of collector current that is passed from the collector to the emitter. That is, the transistor acts as a current amplifier. The amount of current amplification (current gain) is determined by the DC current gain of the transistor.

The operating voltage of the PDTA124EQAZ ranges from 0 to 4.5V. The device operates between 0 and 150℃ and has a very low quiescent current, making it ideal for low power applications. The device is pre-biased, meaning that the base terminal is connected to a fixed potential at the outset. This allows the transistor to be used in applications such as switch and amplifier control, where it is desirable to control a high voltage circuit with a low voltage signal.

The PDTA124EQAZ has relatively low current leakage, making it suitable for applications requiring high isolation between the base and the collector terminals. This is achieved by its built-in intrinsic diode which acts as a low-leakage isolation structure between the terminals. The intrinsic diode also provides the device with protection from over-voltage conditions. The PDTA124EQAZ also has an integrated internal thermal protection structure, which protects against over-temperature conditions.

Conclusion

The PDTA124EQAZ is a single, pre-biased, bipolar junction transistor (BJT). It is primarily used in telecommunications and consumer electronics systems as a radio-frequency (RF) switching element, enabling efficient control of RF signal paths. It is also used in ULV signal switching circuits, such as those required by ultra-low-power, battery-powered circuiry, and in motor control systems. The amount of current amplification (current gain) of the PDTA124EQAZ is determined by the DC current gain of the transistor, and it operates between 0 and 150℃ with a low quiescent current.

The specific data is subject to PDF, and the above content is for reference