PDTA143TU,115 Allicdata Electronics
Allicdata Part #:

PDTA143TU,115-ND

Manufacturer Part#:

PDTA143TU,115

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA143TU,115 datasheetPDTA143TU,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01990
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PDTA143
Description

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The PDTA143TU-115 is a unique bipolar junction transistor (BJT), also known as a single, pre-biased transistors. It is designed with dual-gate transistors in order to provide excellent performance in a wide variety of applications. This device\'s advanced design is intended to enable more efficient operation, higher reliability, and improved immunity to electrostatic discharge.

The PDTA143TU-115 has a rated current of 4 amps. It features a high-current gain of 250 at 25mA collector current. This makes it ideal for applications that require power transfer from a low-voltage to a high-voltage. In addition, the device can carry a peak voltage of 100V as well as continuous and pulsed DC current of up to 5A. Its collector-emitter voltage is 80V.

The PDTA143TU-115 is a built-in device that is manufactured in a three-layer epitaxial-base structure. The device’s housing is constructed of ceramic and resin, allowing for superior thermal dissipation and durability. This feature ensures that the device can handle long-term usage in demanding environments.

The PDTA143TU-115 has two gates which are connected to the emitter and collector. The gates provide the current carrying medium, which allows the transistor to conduct current through a voltage drop across the gates. This makes the device suitable for applications that require low-power capabilities.

The PDTA143TU-115 works by controlling the current flow between the emitter and the collector. When an electrical signal is applied to the base, it alters the resistance of the transistor and causes the emitter-collector junction to become forward biased. This causes current to pass through the collector-emitter of the transistor and produces an amplified voltage output.

The PDTA143TU-115 provides a variety of applications, including power electronics, motor control, instrumentation control, switching, and other applications that require fast response, high-frequency operation. It is also well-suited for linear and power applications where low power and high frequency are needed. In addition, the device is an ideal choice for applications where current transfer from a high-voltage to a low-voltage is required.

In sum, the PDTA143TU-115 is an ideal choice for a variety of high-performance, reliable applications that require current transfer from a low-voltage to a high-voltage. Thanks to its advanced design and superior thermal dissipation characteristics, the PDTA143TU-115 can handle high current and tolerate long-term usage in demanding environments. The device also offers excellent power performance, high-current gain, and a wide range of input voltages.

The specific data is subject to PDF, and the above content is for reference

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