PDTA144TT,215 Allicdata Electronics
Allicdata Part #:

1727-3027-2-ND

Manufacturer Part#:

PDTA144TT,215

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 250MW TO236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA144TT,215 datasheetPDTA144TT,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02189
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PDTA144
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PDTA144TT,215 is a single, pre-biased, bipolar transistor. It is a high-performance semiconductor device, designed for high-current amplifying or switching applications in compact systems. This transistor has a variety of applications due to its unique characteristics.

The PDTA144TT,215 is available with a built-in bias resistor, allowing the transistor to be used in pre-bias circuits. The pre-biased feature eliminates the need for an external resistor, resulting in a smaller, more efficient circuit. This feature also reduces power consumption and increases reliability.

The PDTA144TT,215 features low power dissipation and improved thermal performance. It has a low input capacitance, allowing it to be used in high-speed switching applications. The device also has a breakdown voltage of 140 V, making it suitable for high-power, high-voltage application.

The PDTA144TT,215 uses an NPN bipolar transistor structure. Its base-emitter voltage is 0.9 V, and its collector-emitter voltage is 1 V. Its maximum collector current is 2A and its maximum power dissipation is 0.15W. This transistor is ideal for use in high-current applications, such as high-power audio amplifiers and inverters.

The working principle of the PDTA144TT,215 is based on basic transistors’ qualities. It uses a hole-edge transistor structure and two junction layers for its operation. The two junction layers are located in the base of the transistor and are designed to conduct current between the emitter and the collector. The emitter injects electrons into the base region, while the collector collects them. When the transistor is activated, current flows between the emitter and collector, amplifying the signal along the way.

PDTA144TT,215 transistors have a wide range of applications in various industries. They can be used in electric motors, light dimmers, high-voltage relays, and LED lighting systems. They are also used in audio systems, CD and DVD burners, and amplifiers. Furthermore, they can be used in sensing and measuring circuits, thermistor control, and pull-down resistors.

The PDTA144TT,215 is an excellent choice for applications that require high-current, high-voltage, high-power, and low-noise performance. Its built-in bias resistor and improved thermal performance make it an ideal device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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