PEMB10,115

DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Base Part Number:	MB10
Supplier Device Package:	SOT-666
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	300mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	1µA
Vce Saturation (Max) @ Ib, Ic:	100mV @ 250µA, 5mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PEMB10,115 Application Field and Working Principle

The PEMB10,115 is an array of pre-biased bipolar transistors, also called as BJT (Bipolar Junction Transistor) that has a wide range of applications. It is typically used in high frequency amplifiers, oscillators, noise generators and other electronic circuits.The PEMB10,115 has two sections, each with its own unique operating characteristics. The first section is known as the active BJT, which is an input device with two circuit paths. The first path controls the collector current and the second path controls the base current along with the collector voltage. The active BJT also has an offshore threshold voltage.The second section is a neutralizing BJT with two circuit paths. The first path provides the base current, and the second path provides the collector current. The neutralizing BJT is designed to provide equal current levels for both collector and base sections. This is done by providing an output voltage that is equal to the base voltage, thus creating a “floating” base voltage that is balanced between the collector and base sections.The PEMB10,115 has various application fields in various applications such as:

• High frequency amplifiers
• Noise generators
• Oscillators
• Fast switching applications
• Mixed-signal systems
• Low-back drain amplifier designs
• Power control circuits
• Motor control
• Switching power supplies

The working principle of the PEMB10,115 is quite simple as compared to other transistor configurations. The current is passed through the input device, resulting in the generation of current from the collector to the base, with a constant voltage applied to the input device. The output voltage is created between the base and the collector and is the sum of the collector voltage and the difference between the base voltage and the input voltage.The current passing through the input device is precisely controlled by limiting the applied voltage. During operation, the collector current is directly proportional to the difference between the base voltage and the input voltage. The voltage supplied to the input device is then used to regulate the base-collector ratio so that the current passing through the collector follows the current passing through the input device.The PEMB10,115 is an efficient and reliable BJT (Bipolar Junction Transistor) configuration that is commonly used in high frequency applications. Its configuration and functionality are highly reliable, making it a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description