Allicdata Part #: | PEMB16,115-ND |
Manufacturer Part#: |
PEMB16,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2PNP PREBIAS 0.3W SOT666 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | PEMB16,115 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.04275 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Base Part Number: | MB16 |
Supplier Device Package: | SOT-666 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PEMB16,115 is a type of bipolar junction transistor (BJT) array designed for use when pre-biasing is needed. This device is a four-transistor array and it is designed for use in low voltage applications such as digital signal processing, discrete component sensing and so on. The device is capable of providing long term opportunities for pre-biasing, as well as allowing for thermally compensated pre-biasing. It is important to note that this device has an integrated thermal diode to help protect the devices from thermal runaway.
The PEMB16,115 is characterized by a breakdown voltage of 50V and collector-emitter voltage of 16V. In addition, the peak collector current is 5A and the total power dissipation is 750mW. Other features of this device include a space saving 4-pin package and full ESD protection. The PEMB16,115 is rated for a power demand of 20mA and a base current of 75mA.
This product is a popular choice for applications that require the pre-biasing of BJTs, as it provides long-term pre-biasing and is available in a space-saving four pin package. It is useful in a variety of applications across multiple industries, such as automotive, industrial, medical and consumer electronics.
The working principle of the PEMB16,115 is based on the concept of pre-biasing. This device can be used to pre-bias the bipolar junctions of a BJT in order to reduce their turn-on voltage and turn-on time. It does this by using the integrated thermal diode to provide a constant current to the junctions during the pre-biasing stage. This current is then used to reduce the energy required to drive the junctions into the forward direction. Once the forward bias is established, the pre-bias current is dropped and the device is ready to operate.
The PEMB16,115 is a versatile device that can be used in a variety of low-voltage applications. It is a highly efficient device that provides long-term pre-biasing capabilities, excellent ESD protection and a space saving four-pin package. Its integrated thermal diode makes it a safe and reliable device that can be used in a variety of pre-bias applications.
The specific data is subject to PDF, and the above content is for reference
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