![PEMB17,115 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | PEMB17,115-ND |
Manufacturer Part#: |
PEMB17,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2PNP PREBIAS 0.3W SOT666 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 0.04275 |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 5V |
Base Part Number: | MB17 |
Supplier Device Package: | SOT-666 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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Introduction:
The PEMB17,115 is a pre-biased array of bipolar junction transistors (BJT) commonly used in applications like audio amplifiers and power switching circuits. It consists of four NPN transistors arranged in two pairs, each pair has its own emitter resistor, base bias resistor and a base bypass capacitor. The device provides improved heat dissipation and high input / output isolation.Application Field:
The PEMB17,115 is specifically designed for audio amplifiers, power switching circuits, and other applications where the need to keep low profile and low component count becomes a major concern. It is an excellent choice for applications that require low-level driving capability and fast response time.Working Principle:
The PEMB17,115 is designed to operate in two ways:
- Inverter Mode: In this mode, the PEMB17,115 is used as an inverting amplifier. The input signal is applied to the base of the first NPN transistor, and the output signal is taken from the collector of the second transistor. The first two transistors, form an NPN gain stage, which drives the second pair of transistors which form the output stage. The bias voltage is set by the base resistor, the collector resistor and the bypass capacitor.
- Non-Inverting Mode: In this mode, the input signal is applied to the base of the first NPN transistor, and the output is taken from the collector of the first transistor. The base resistor, the collector resistor and the bypass capacitor are used to set the bias voltage.
Performance:
The PEMB17,115 has enhanced thermal performance due to its dielectric between the collectors and emitters, which reduces junction-to-case thermal resistance. This allows for greater power dissipation. The device also provides an isolation between the inputs and outputs. This prevents any interference from the input section from affecting the output.The device supports fast switching speeds, and has low leakage currents. This prevent any noise or interference that would affect the device’s performance.Conclusion:
The PEMB17,115 is an excellent choice for applications that require low-level driving capability and fast response time. Its dielectric between the collectors and emitters provides improved thermal performance and low leakage current, while its NPN gain stage and output stage enhance signal-noise ratio and provides improved device and system performance.
The specific data is subject to PDF, and the above content is for reference
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