| Allicdata Part #: | 1727-6498-2-ND |
| Manufacturer Part#: |
PEMB11,115 |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | TRANS 2PNP PREBIAS 0.3W SOT666 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
| DataSheet: | PEMB11,115 Datasheet/PDF |
| Quantity: | 8000 |
| 4000 +: | $ 0.04479 |
| 8000 +: | $ 0.03895 |
| 12000 +: | $ 0.03311 |
| 28000 +: | $ 0.03116 |
| 100000 +: | $ 0.02590 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
| Base Part Number: | MB11 |
| Supplier Device Package: | SOT-666 |
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Power - Max: | 300mW |
| Frequency - Transition: | 180MHz |
| Current - Collector Cutoff (Max): | 1µA |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 10 kOhms |
| Resistor - Base (R1): | 10 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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PEMB11,115 is a type of transistors array that uses bipolar junction transistors (BJT). This makes them suitable for applications in which good transistor characteristics as well as circuit board space constraints are important. This type of device is often pre-biased, which means that it often requires little external initialization before use.
The PEMB11,115 consists of two NPN transitors in a single package. It is primarily used in high power applications, such as telecom and computing systems, where the ability to transfer a large amount of energy over a long distance is important.
The PEMB11,115 is a 3 terminal device, with the collector, base and emitter terminals. In order for the transistor to perform its intended functions, the collector and base are connected to the appropriate power supply, while the emitter is connected to the required electrical load.
In the PEMB11,115, the base current is the signal that controls the transfer of the collector current from the emitter to the collector. The collector current (IC) is greater than the base current (IB). Since the collector current is much greater than the base current, it is possible to efficiently transfer power over a distance even at relatively low base currents.
The two transistors in the PEMB11,115 are biased in the same direction, and they share the same collector current. As a result, the device’s performance is very efficient. This allows for a relatively small amount of current to be used in order to achieve a desired amount of power transfer.
The PEMB11,115 can be used to control the level of current in a load device. This type of transistor array is suitable for applications in which the power efficiency and low power dissipation are important, such as in mobile and portable devices.
In addition, the PEMB11,115 can also be used to switch between DC and AC signals. Since the base current is lower than the collector current, it is possible to have a very fast switching time. This is invaluable for applications where a very high speed is needed, such as in computers.
The PEMB11,115 is also suitable for applications in which the power efficiency is important, such as in power supplies and amplifiers. In these applications it is important to ensure that the device has a good thermal efficiency, which is possible with the PEMB11,115.
Overall, the PEMB11,115 is a great choice for applications in which good characteristics and circuit board space constraints are important. Its pre-biasing reduces the amount of external setup required, and its efficient performance makes it suitable for high power applications. Additionally, its fast switching times make it a great choice for applications in which speed is essential.
The specific data is subject to PDF, and the above content is for reference
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PEMB11,115 Datasheet/PDF