PEMB13,115 Allicdata Electronics
Allicdata Part #:

PEMB13,115-ND

Manufacturer Part#:

PEMB13,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2PNP PREBIAS 0.3W SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: PEMB13,115 datasheetPEMB13,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04275
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: --
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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PEMB13,115 is a type of pre-biased array in the bipolar junction transistor (BJT). As a pre-biased array it is designed for applications which require small size, low power and high voltage giving an optimal performance. It is suitable for use in various types of circuits like current mirrors, differential amplifiers, high power amplification, or low noise applications.

The structure of PEMB13,115 consists of two arrays, a single 3-terminal BJT and a diode-connected BJT. The diode-connected BJT is used to bias the single 3-terminal BJT. This configuration allows the PEMB13,115 to provide an effective on-resistance with a small voltage drop. This makes it efficient in power applications as it does not require large gate voltages.

In addition to its small size and high voltage, the PEMB13,115 also provides a high input impedance. This allows for the device to be used in high gain applications without the need for additional components. It is also able to provide a low output resistance, making it suitable for applications which require a high output current. The PEMB13,115 also provides a low capacitance which makes it suitable for use in high speed applications.

The usage of PEMB13,115 depends on the application field. It can be used in circuits such as differential amplifier, current mirror, or high power amplification. It can also be used in low noise applications where its low noise characteristics make it ideal for use. Additionally, the PEMB13,115 is also suitable for use in applications where low capacitance is important such as power switching applications.

In terms of working principle, the PEMB13,115 is a two-terminal device in which a diode connected BJT is used to bias the single 3-terminal BJT. As the output increases, the diode-connected BJT is biased more and more and this in turn increases the current through the PEMB13,115. As the current increases, the voltage drop across the PEMB13,115 decreases and this is what makes the PEMB13,115 so efficient in power applications. In addition to this, the PEMB13,115 also provides a high input impedance, low output resistance, and low capacitance.

In conclusion, PEMB13,115 is a pre-biased array which is designed for small size, low power, and high voltage applications. It is suitable for applications such as current mirrors, differential amplifiers, high power amplification, or low noise applications. It provides a high input impedance, low output resistance, and low capacitance making it suitable for use with high gain applications. The PEMB13,115 also provides an efficient on-resistance with a small voltage drop which makes it efficient in power applications.

The specific data is subject to PDF, and the above content is for reference

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