PEMB2,115 Allicdata Electronics
Allicdata Part #:

PEMB2,115-ND

Manufacturer Part#:

PEMB2,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2PNP PREBIAS 0.3W SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: PEMB2,115 datasheetPEMB2,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04275
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Base Part Number: MB2
Supplier Device Package: SOT-666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Bipolar junction transistors (BJT) are a type of active semiconductor device which utilizes three or more doped semiconductor regions to control the current flow. The BJT is made up of two junctions, a base-emitter junction and a collector-base junction, connected together by a common collector region. This type of device has been in use for decades, and is one of the oldest transistor designs. The BJT array, also known as PEMB2,115 is an array of several BJTs which are all pre-biased. Pre-bias refers to the process of applying a voltage to the BJT’s base while isolating it from the emitter, collector, or both.

The PEMB2,115 is most commonly used in low-noise amplifier circuits, as it offers low noise figures due to its pre-biased transistors, and is also capable of handling high frequencies. The pre-biased array also reduces the voltage drop across a BJT by a large amount, making it more efficient and allowing it to receive higher frequencies. The PEMB2,115 is also well-suited for low-voltage, low-power applications such as portable devices.

The construction of the PEMB2,115 is fairly simple. An NPN BJT is connected to the collector, with its emitter connected to ground and its base connected to the voltage supply. The second BJT is then connected between the collector and emitter, with its base connected to the first BJT\'s emitter, and its emitter and collector then connected to ground and the voltage supply, respectively. This setup allows for the two BJTs to be pre-biased and operate independently of each other.

The working principle of the PEMB2,115 is relatively simple. When a voltage is applied to the base, it drives current through the base-emitter junction, and the resulting current causes a voltage drop across the transistor\'s collector and emitter. This voltage drop is proportional to the voltage applied to the base, giving it its pre-biased characteristic. As the voltage supply is steady, the PEMB2,115 maintains a stable, low-noise output.

The PEMB2,115 is a very useful device and is used in a wide range of applications, including those in the communications, automotive, and medical fields. In communications, the PEMB2,115 is well suited to applications such as wireless access points and receivers, due to its low noise figures and ability to handle high frequencies. In automotive applications, the PEMB2,115 is commonly found in drivers and controllers due to its low supply voltage and high-frequency capabilities. In medical applications, the PEMB2,115 is used in hearing aids and other low-power, low-noise devices.

The PEMB2,115 is an example of a versatile and well-designed biotech product that can be used in a variety of applications. Thanks to its pre-biased design, the PEMB2,115 offers low noise figures and is well-suited for low-voltage, low-power applications. The array also offers a cost-effective alternative to conventional bipolar transistors, and its applications span a wide range of industries. With its simple construction and reliable performance, the PEMB2,115 is an excellent choice for low-power applications.

The specific data is subject to PDF, and the above content is for reference

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