PHD3055E,118

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PHD3055E 118 application field and working principle

The PHD3055E 118 is a p-channel Enhancement Mode Field Effect Transistor (FET) specifically designed for high speed switching applications. It has an exceptionally low on-state resistance, low gate to source threshold voltage, and is capable of very high current capabilities. The PHD3055E 118 is ideal for applications such as general-purpose power transistor and DC motor drive, and can be used for load and line regulation.

Historical Background

Field Effect Transistors (FETs) were invented in the 1960s, but they didn\'t become commercially available until the 1970s. They were developed as a way to make more efficient and reliable transistors by switching off the current flow with the application of a control voltage rather than having to control the current with the gate voltage. FETs eventually replaced traditional bipolar transistors as the standard in integrated circuit design, as they allowed for lower power consumption and higher speeds of operation.

PHD3055E 118 Construction

The PHD3055E 118 is an enhancement-mode, depletion-mode FET. It consists of three terminals known as the gate, drain, and source. The gate controls the flow of electrons from source to drain. It is connected to a resistor, which in turn is connected to a bias voltage source. When the gate voltage is low, electrons are prevented from flowing from the source to the drain, and the FET is “off”. When the gate voltage is higher, electrons are allowed to flow from the source to the drain, and the FET is “on”. This difference between the off state and the on state is known as the threshold voltage.

PHD3055E 118 Application Field

One of the main applications of the PHD3055E 118 is as a power transistor. It can be used in power supplies, amplifiers, switching circuits, and many other electronic devices. The low on-state resistance, low gate to source threshold voltage, and high current capability makes it an ideal choice for applications such as general-purpose power transistors and DC motor drives.

PHD3055E 118 Working Principle

The working principle of the PHD3055E 118 is based on the field-effect phenomenon, in which electrons are allowed to flow from the source to the drain in proportion to the voltage of the gate. There are two important terms related to field effect transistors: threshold voltage and transconductance. The threshold voltage is the voltage required to turn the transistor on. The transconductance is the ratio between the drain current and the gate voltage.

When the gate voltage is low, the electrons are prevented from flowing from the source to the drain, and the FET is in the off state. As the gate voltage increases, the electrons start to flow. The higher the gate voltage, the more electrons will flow, and the FET is in the on state. The PHD3055E 118 has an exceptionally low threshold voltage and high transconductance, which makes it ideal for high-speed switching applications.

Conclusion

The PHD3055E 118 is a high-performance, p-channel enhancement-mode field effect transistor (FET) specifically designed for high-speed switching applications. It is capable of withstanding high currents, and has a low on-state resistance and a low gate to source threshold voltage. Due to its low threshold voltage and high transconductance, it is ideal for power transistor and DC motor drive applications.

The specific data is subject to PDF, and the above content is for reference