PHD36N03LT,118

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PHD36N03LT is a single N-channel enhancement mode Mosfet featuring low on-state resistance and normal output capacitance. It is widely used in various applications including DC-DC converters, motor drivers, lamp drivers, and appliance electronic controls. It is also suitable for high side switches and low side switches.

The internal structure of the PHD36N03LT consists of a silicon-base layer and two drain and source regions separated by an insulated gate. The gate of the device is at negative potential relative to the source. This negative potential lowers the threshold voltage of the emitter-base junction of the connected transistor, which in turn restricts the on-state current. This type of Mosfet is known as an enhancement-mode Mosfet as it is normally off and can only be turned on through the application of external voltages.

The PHD36N03LT has a low on-state resistance of 0,3 Ohm. This low resistance allows high conduction of the drain current and thus enables a highly efficient power switching operation. Furthermore, the device has a high current rating of 9.6 A making it suitable for both high-power and low-power applications. The normal output capacitance is negligible for low-power applications. On the other hand, for high-power applications, the output capacitance can be significant as it reduces the rate of change of the output voltage relative to the input frequency.

The PHD36N03LT utilizes a low-power gate drive voltage, which eliminates the need for an external drive circuitry and allows for a more compact system design. The device is also RoHS compliant and environmentally friendly as it is free from hazardous material such as lead and mercury. The current on-state resistance of the device is 3 mW and the input capacitance is equivalent to 0.2 pF.

The PHD36N03LT is a highly efficient single N-channel enhancement-mode Mosfet that is widely used in various applications due to its low on-state resistance, normal output capacitance, high current rating, and low-power gate drive voltage. The device is also RoHS compliant and environmentally friendly as it is free from hazardous materials. The current on-state resistance of the device is 3 mW and the input capacitance is equivalent to 0.2 pF.

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