PLZ30A-G3/H Allicdata Electronics

PLZ30A-G3/H Discrete Semiconductor Products

Allicdata Part #:

PLZ30A-G3/HGITR-ND

Manufacturer Part#:

PLZ30A-G3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 30V 500MW DO219AC
More Detail: Zener Diode 30V 500mW ±3% Surface Mount DO-219AC (...
DataSheet: PLZ30A-G3/H datasheetPLZ30A-G3/H Datasheet/PDF
Quantity: 1000
4500 +: $ 0.03499
9000 +: $ 0.03043
13500 +: $ 0.02586
31500 +: $ 0.02434
112500 +: $ 0.02029
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 30V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 55 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 23V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Supplier Device Package: DO-219AC (microSMF)
Description

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Diodes are solid-state semiconductor devices that allow current to flow under positive external conditions and restrict current under negative external conditions. Zener diodes are a type of diode that utilizes the reverse-bias voltage breakdown process to create a fixed voltage in a given device. Single Zener diodes differ from dual Zener diodes in that they only possess one Zener junction. The PLZ30A-G3/H is an example of such a single Zener diode. This article will cover the application field and working principle of the PLZ30A-G3/H Zener diode.The PLZ30A-G3/H is ideally suited for use in a variety of DC applications, such as overvoltage protection, as well as DC lightning protection circuits. This diode is also popular in stabilizing the power supply voltage, power switch control, active filter circuits, and the like. Additionally, this diode is used in audio crossover filters, frequency divider networks, and motor commutation circuits.When used in any of these applications, the PLZ30A-G3/H is able to effectively regulate the voltage in a given circuit. This is done by utilizing the doping process to create a heavily-doped P-type material sandwiched between two N-type layers. This material, referred to as the Zener junction, has a higher electrical breakdown point than the diodes standard PN junction.When a diode is reverse biased, the electric field strength of the Zener region will increase. If the voltage of the reverse bias exceeds the Zener breakdown voltage, the Zener junction undergoes an avalanche breakdown, allowing a reverse current to flow through the junction. This results in a nearly constant voltage across the junction equal to the Zener breakdown voltage. In the case of the PLZ30A-G3/H, the Zener breakdown voltage is specified at 30V.The PLZ30A-G3/H also has a maximum power rating of 5 Watts, a maximum operating temperature range of -40 to +100 degrees Celsius, and an operation current of 1mA. Additionally, this diode has a maximum reverse leakage current of 100μA and an exact maximum clamped voltage of 24V.To summarize, the PLZ30A-G3/H is a single Zener diode used in a wide variety of DC applications. This diode utilizes the doping process of a heavily-doped P-type material to create a Zener junction with a breakdown voltage of 30V. When subjected to a voltage exceeding this breakdown voltage, the Zener junction undergoes an avalanche breakdown, resulting in a nearly constant voltage across the junction. Additionally, this diode has a maximum power rating of 5 watts, a maximum operating temperature range of -40 to +100 degrees Celsius, and an operation current of 1mA.

The specific data is subject to PDF, and the above content is for reference

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