PLZ3V3B-G3/H Allicdata Electronics

PLZ3V3B-G3/H Discrete Semiconductor Products

Allicdata Part #:

PLZ3V3B-G3/HGITR-ND

Manufacturer Part#:

PLZ3V3B-G3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 3.425V 960MW DO219AC
More Detail: Zener Diode 3.43V 960mW ±3.07% Surface Mount DO-21...
DataSheet: PLZ3V3B-G3/H datasheetPLZ3V3B-G3/H Datasheet/PDF
Quantity: 22500
4500 +: $ 0.03195
9000 +: $ 0.02778
13500 +: $ 0.02362
31500 +: $ 0.02223
112500 +: $ 0.01852
Stock 22500Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101, PLZ
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.43V
Tolerance: ±3.07%
Power - Max: 960mW
Impedance (Max) (Zzt): 70 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Supplier Device Package: DO-219AC (microSMF)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PLZ3V3B-G3/H is a single Zener diode, meaning that it is a type of semiconductor diode with a designated “breakdown” voltage. It is designed specifically to limit voltages that are applied across the terminals. This helps to ensure that the terminals do not experience high voltages, which might damage the component.The application field of the PLZ3V3B-G3/H is wide and varied. It can be used in many different kinds of circuitry and systems, such as for voltage regulation, for smoothing power irregularities, for power supply design, as a component of high speed memory logic, as well as in a variety of other applications. In addition, its usefulness can be seen in commercial and consumer products, such as television sets, cell phones, digital cameras and computers.The working principle of the PLZ3V3B-G3/H is based on the physical properties of semiconductor materials. It is essentially two layers of semiconductor material, one being negatively charged and the other being positively charged. It is constructed in such a way that the depletion region, which is the area between the two layers that contains no charge, can be manipulated so that when a voltage is applied, it breaks down and allows current to flow through its terminals.When voltages become too high, the breakdown occurs, thus diverting any excess voltage away from the terminals. When the voltage is below the breakdown point, the diode has no appreciable conductivity, thus limiting voltages to the desired range and ensuring that the component is not damaged.In addition, the PLZ3V3B-G3/H also offers some advantages in terms of size and cost. It is relatively small compared to other types of diodes and can be mass-produced in a cost-effective manner. Furthermore, since it is a single unit, there is no need for packaging, thus reducing the cost even further.Overall, the PLZ3V3B-G3/H is a viable choice for a number of applications and is a durable and highly cost-effective component for regulating power sources and protecting components from dangerous voltage conditions. It is universally applicable in a variety of electronic and electrical systems, and its durability and relatively low cost make it a popular choice for many industries.

The specific data is subject to PDF, and the above content is for reference

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