PLZ39C-HG3/H

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The PLZ39C-HG3/H diode is a unique type of device that helps to control the flow of electricity, enabling electrical engineers to better regulate components in a circuit. Though a complicated device, its robust design makes it highly reliable and durable for a variety of applications. This article will explain the applications, working principle and specifications of the PLZ39C-HG3/H, in order to provide a better understanding of its capabilities.

Applications. The PLZ39C-HG3/H diode is used primarily in the industrial sector, as well as various other applications, such as telecommunications and medical equipment. Generally, it is used in electrical and electronic systems to maintain a steady voltage and current reference. It is also used to rectify AC signals to provide DC signals.

Working Principle. The core design of the PLZ39C-HG3/H is based on the principle of avalanche breakdown, a phenomenon where a certain level of reverse biasing of a PN junction diode causes electrons to surge through the diode, resulting in an avalanche effect which can be controlled and monitored. To ensure robust and consistent operation, the device is incorporated with several features, such as a reverse recovery time, reverse current and reverse breakdown voltage.

When the diode is connected in a circuit, current passes through it and is either completely blocked (in a forward bias) or completely forward biased, depending on the operating voltage. When the reverse bias on the device exceeds its reverse breakdown voltage, the avalanche of electrons occurs, and current begins to flow. This prevents the voltage from exceeding the breakdown voltage and enables safer and more reliable operation of the device, as well as the entire circuit.

Specifications. The PLZ39C-HG3/H diode has several key specifications that should be taken into consideration when selecting it for a specific application. For example, its Maximum Continuous Current (at Temperature Rise RΘJL = 75°C) is 140mA, while its Reverse Recovery Time (t rr ) is 40ns. Additionally, its Reverse Breakdown Voltage (V BR ) is 39.0V, and its Reverse Current (I R ) is 30µA at 25°C.

In conclusion, the PLZ39C-HG3/H is an innovative and robust diode for a variety of industrial, telecommunications and medical applications. By leveraging the principle of avalanche breakdown, the device is able to efficiently limit voltage and current and protect the entire circuit from potential damage due to overvoltage or overcurrent. As such, engineers can rest assured that their design will benefit from its increased safety, reliability and performance.

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