PLZ39A-HG3/H

Diodes - Zener - Single

PLZ39A-HG3/H is a single zener diode with an adjustable voltage range. It is designed for applications such as voltage regulation, voltage dividing, voltage buffering and other similar electronic applications. It has a low resistance and high power handling capacity, which makes it suitable for a variety of applications.

The structure of PLZ39A-HG3/H is composed of a p-type semiconductor substrate and an n-type region. In N-type region, the P and N regions are connected through a high-grade insulator, which prevents electrical leakage and forms the diode. The N-type region will contain an amount of metal, which affects the zener characteristics of the diode. The metal is usually doped with silicon, boron, phosphorus and other elements to obtain the required zener characteristics.
The doping of the metal controls the breakdown voltage, temperature coefficient and other characteristics of the diode. This causes the adjustable voltage range of the diode.

The working principle of the PLZ39A-HG3/H diode is as follows. When no external bias is applied, the diode has a "high impedance" state or "reverse biased" state. In this state, the reverse current is very low and the voltage across the diode is high. When a positive voltage is applied to the diode, it starts to increase its current flow until the device reaches its breakdown voltage, which is the threshold voltage of the diode. When this voltage is reached, the electric field around the diode significantly increases and the current starts to flow in an avalanche effect. This avalanche effect results in a large amount of current flowing through the diode, thus overcoming the electric resistance of the diode.

When a variable voltage source is used, the breakdown voltage of the diode can be adjusted according to the voltage applied to it. This is the reason why PLZ39A-HG3/H is suitable for regulating and dividing the voltage applied to it. It can be used in circuits where it is necessary to control or adjust the voltage or current applied to the diode.

In conclusion, PLZ39A-HG3/H is a single zener diode with adjustable voltage range. Its structure is composed of a p-type semiconductor substrate and an n-type region. The doping of the metal in the N-type region controls the breakdown voltage, temperature coefficient and other characteristics of the diode. The working principle of the diode is that it conducts current when the applied voltage reaches its breakdown voltage. This makes the diode suitable for applications such as voltage regulation, voltage dividing, voltage buffering and other similar electronic applications.