PLZ39B-HG3/H Allicdata Electronics
Allicdata Part #:

PLZ39B-HG3/HGITR-ND

Manufacturer Part#:

PLZ39B-HG3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 39V 500MW DO219AC
More Detail: Zener Diode 39V 500mW ±3% Surface Mount DO-219AC (...
DataSheet: PLZ39B-HG3/H datasheetPLZ39B-HG3/H Datasheet/PDF
Quantity: 1000
4500 +: $ 0.03499
9000 +: $ 0.03043
13500 +: $ 0.02586
31500 +: $ 0.02434
112500 +: $ 0.02029
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 39V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 85 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 30V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Supplier Device Package: DO-219AC (microSMF)
Description

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Application Field and Working Principle of PLZ39B-HG3/H.

Introduction

The PLZ39B-HG3/H type is a single Zener diode, a type of semiconductor device commonly used as a voltage regulator in electronic circuits. It is typically a PN-junction diode configured to have a low breakdown voltage between the anode and cathode terminals. The device is typically only capable of conducting current in the forward direction and is characterized by the voltage at which the junction breakdown occurs. This diode is often used to provide a stable voltage output in applications such as power supplies and circuit protection.

Detailed Description

The PLZ39B-HG3/H is a 200 mW, dual-terminal, hermetically sealed diode device with a standard PN-junction semiconductor construction. A single Zener diode, it is designed for use in precision voltage regulation and power supply applications, with a cathode-anode breakdown voltage of 3.9 Volts. Manufactured using standard PN-junction technology on a ceramic substrate, the device is capable of operating over a wide current range while maintaining a high level of reliability and performance.

The PLZ39B-HG3/H diode consists of an n- region and a p-region, which form the PN-junction. This junction is responsible for the electrical characteristics of the device. As a voltage is applied to the PN-junction, a small amount of current is able to flow until a certain voltage, known as the Zener voltage, is reached. At the Zener voltage, the PN-junction breakdowns and the entire current start flowing through the diode. This breakdown voltage is the rated breakdown voltage of the diode and remains constant until the diode fails or is overstressed.

The PLZ39B-HG3/H diode is designed to have an extremely low leakage current and a high reverse breakdown voltage. This allows the device to operate in a wide variety of applications such as voltage regulation and power supply applications, where precision voltage regulation and low power loss are required. The device is also designed to be temperature compensated and features a temperature coefficient of typically less than 60mV/°C.

Applications

The PLZ39B-HG3/H diode is commonly used as a voltage regulator in a wide range of applications, such as power supplies, oscillator circuits, voltage reference circuits, and precision voltage regulation applications. Its low leakage current and high reverse breakdown voltage make it ideal for use in circuits where precision voltage regulation and low power loss are required. Additionally, the device\'s temperature coefficient and low temperature drift allow it to be used in precision voltage regulation applications, where temperature stability is important. The device\'s hermetic seal makes it suitable for use in harsh environments, such as in medical and military applications.

Conclusion

The PLZ39B-HG3/H is a single Zener diode designed for use in precision voltage regulation and power supply applications. The PN-junction of the diode is designed to have a breakdown voltage of 3.9 Volts, with an extremely low leakage current and a high reverse breakdown voltage. The device is temperature compensated with a temperature coefficient of less than 60mV/°C and hermetically sealed, making it suitable for use in harsh environments. The PLZ39B-HG3/H is a highly reliable device, capable of operating over a wide current range and providing precision voltage regulation in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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