PLZ3V0B-HG3/H Allicdata Electronics
Allicdata Part #:

PLZ3V0B-HG3/HGITR-ND

Manufacturer Part#:

PLZ3V0B-HG3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 3.115V 960MW DO219AC
More Detail: Zener Diode 3.12V 960mW ±3.37% Surface Mount DO-21...
DataSheet: PLZ3V0B-HG3/H datasheetPLZ3V0B-HG3/H Datasheet/PDF
Quantity: 1000
4500 +: $ 0.03499
9000 +: $ 0.03043
13500 +: $ 0.02586
31500 +: $ 0.02434
112500 +: $ 0.02029
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101, PLZ
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.12V
Tolerance: ±3.37%
Power - Max: 960mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 20µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Supplier Device Package: DO-219AC (microSMF)
Description

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Diodes are small electronic components that are most commonly used to control the flow of electrical current. In particular, Zener diodes are used to regulate the voltage by allowing current to flow in only one direction and preventing current from backing up. The PLZ3V0B-HG3/H is a single Zener diode that comes in a SOT-23 package and is ideal for applications where low voltage drop and low power dissipation are desired.

The PLZ3V0B-HG3/H can be used in a variety of applications, including power supply and voltage regulation. In a power supply application, the diode can be used to regulate the output voltage of the power circuit by preventing any reverse current. The PLZ3V0B-HG3/H has a low leakage current, which makes it well suited for applications where the output voltage needs to be accurately maintained. In voltage regulation applications, the diode can be used to maintain a constant voltage despite changes in the input voltage.

The working principle of the PLZ3V0B-HG3/H is based on the Zener breakdown effect. When an electric field is applied to the diode, the electrons in the diode are accelerated and collide with nearby atoms. This causes the atoms to become ionized and create an electric field of its own, which in turn causes additional electrons to be accelerated and ionized. This process can continue until the reverse voltage reaches a critical value known as the Zener voltage. At this point, electron–hole pairs are released from the valence band, resulting in a rapid avalanche breakdown of the diode and allowing current to flow in the reverse direction.

The PLZ3V0B-HG3/H is designed to prevent a reverse voltage in excess of its rated breakdown voltage. When the reverse voltage is below the breakdown voltage, the diode behaves similarly to an ordinary silicon diode, with a small but not insignificant reverse current. When the reverse voltage increases and reaches the breakdown voltage, the diode suddenly becomes forward-biased and a large reverse current flows. This high current is then limited by an external resistance in order to provide a regulated voltage.

The PLZ3V0B-HG3/H is a versatile and reliable diode that can be used in a variety of settings to regulate voltage. Its small package size makes it ideal for applications where space is limited, and its low voltage drop and low power dissipation makes it well suited for high current applications. This makes the PLZ3V0B-HG3/H an attractive choice for designers looking to maximize efficiency and performance in their designs.

The specific data is subject to PDF, and the above content is for reference

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