PMF63UN,115 Allicdata Electronics
Allicdata Part #:

568-10785-2-ND

Manufacturer Part#:

PMF63UN,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 20V 1.8A SOT323
More Detail: N-Channel 20V 1.8A (Ta) 275mW (Ta), 1.785W (Tc) Su...
DataSheet: PMF63UN,115 datasheetPMF63UN,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 275mW (Ta), 1.785W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 74 mOhm @ 1.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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PMF63UN is one type of insulated gate field effect transistor (IGFET) which belongs to the single MOSFET family. This type of transistor is also a voltage controlled device, and as such it is part of the bigger category of transistors known as field effect transistors (FETs). PMF63UN has numerous applications, mainly in high frequency analog circuits, due to its excellent high frequency characteristics. This device can also handle very large currents. Furthermore, it has the added benefit of being extremely low in on-resistance due to its design.

PMF63UN features a number of main characteristics, such as symmetric performance, low on-resistance, high power dissipation, inherent low capacitance and wide input voltage range. This type of transistor also offers fast switch times, low structural inductivity, high dv/dt capability, positive tempco and high break down voltage. It also has high surge current capability, low switching losses and improved dynamic behavior.

The PMF63UN is an insulated gate field effect transistor that is used mainly for several industrial applications, including analog circuits, audio, RF and power switching. This type of transistor is also suited for a variety of other types of applications, such as in motor control circuits, motor drivers, relays and various inductive circuits. The PMF63UN can also be used as an input and output stage in video amplifiers and video switching applications, and is also suitable for power management and regulation.

The working principle behind the PMF63UN is quite straightforward. First, the gate voltage controls the type and amount of current flowing through the transistor. If the gate voltage is high, it will turn on the device and allow a flow of current through it. The current is then controlled by the channel resistance. The channel resistance is determined by the amount of voltage passed through it. The lower the channel resistance, the higher the current flowing through the PMF63UN.

Another key feature of the PMF63UN is its power handling capability. This device can handle up to 50 watts of power, which makes it a great solution for many power control applications. The PMF63UN is also able to provide high speed switching response and stability, and can handle fast switching times. All of these features make the PMF63UN a great choice for a wide variety of applications.

In conclusion, the PMF63UN is an insulated gate field effect transistor that is well suited for a variety of applications. It features excellent high frequency characteristics and is able to handle very large currents. Additionally, it is low in on-resistance, offers fast switching times, and has high power handling capabilities. This makes it a great choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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