| Allicdata Part #: | 568-10786-2-ND |
| Manufacturer Part#: |
PMF77XN,115 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | MOSFET N-CH 30V 1.5A SOT323 |
| More Detail: | N-Channel 30V 1.5A (Ta) 270mW (Ta), 1.92W (Tc) Sur... |
| DataSheet: |  PMF77XN,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 270mW (Ta), 1.92W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 97 mOhm @ 1.5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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PMF77XN,115 is a type of Transistor – FETs, MOSFETs – Single device, it has similarly advantages as other MOSFETs while increased current capacity. Compared to regular MOSFET, it can provide larger current capacity and improved thermal performance.
PMF77XN,115 device features an extremely low on-state resistance that is gate charge independent and which is optimized for high DC current carrying capacity. It also features superior thermal performance due to its high gain-bandwidth and improved avalanche energy ratings.
PMF77XN,115 application fields mainly include voltage regulator, DC-DC converters, synchronous rectification, load switching, uninterruptible power supplies, as well as other applications as low on resistance is needed for power control.
The working principle of PMF77XN,115 is based on MOSFET structure. It consists of source, drain and gate terminal. When negative voltage is applied to gate terminal, drain and source terminals can form a electronic current channel, thus forming a closed circuit.
The drain current is controlled by the gate voltage and is proportional to the drain-source voltage. The channel will be in an “on” state when the gate voltage is high enough to create a channel with low resistance. This structure helps PMF77XN,115 provide low on-state resistance, high conduction current, as well as improved thermal performance.
In conclusion, PMF77XN,115 is a type of Transistor – FETs, MOSFETs – Single device, its applications mainly include voltage regulator, DC-DC converters, and other applications as low on resistance is needed for power control. Its excellent performance is based on the MOSFET structure with source, drain and gate terminals, and current can be controlled by applying negative gate voltage.
The specific data is subject to PDF, and the above content is for reference
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