PMF780SN,115 Allicdata Electronics
Allicdata Part #:

PMF780SN,115-ND

Manufacturer Part#:

PMF780SN,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 60V 570MA SOT323
More Detail: N-Channel 60V 570mA (Ta) 560mW (Tc) Surface Mount ...
DataSheet: PMF780SN,115 datasheetPMF780SN,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 560mW (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 570mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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PMF780SN,115 is a type of power metal oxide semiconductor field effect transistors (Power MOSFET). It is a single high voltage, high current field effect transistor with an operating voltage of 40 V to 100 V and a drain current of up to 115 A. It is generally used for power applications in high power converters, such as SMPS and PFCs.

The PMF780SN,115 is part of a range of p-channel MOSFETs available from Diodes, Inc. It has a high voltage tolerance, making it suitable for use in a variety of power management applications. The device is specified for an effective channel length of 5 mm and a gate charge of 13.0 nC. The maximum power dissipation is 555 W, while the on-state resistance is 4.3 mOhm.

The device is based on the principle of carrier conduction in a semiconducting material. This principle explains how an electric field created by the voltage applied across the gate causes the movement of charge carriers, which are holes or electrons, between the source and drain regions. This movement of charge is what produces a flow of current through the device.

The PMF780SN,115 is most commonly used in power converter applications, such as switch-mode power supplies (SMPS) and pulse-width modulation (PWM) controllers. It can be used for both linear (DC-DC) and nonlinear (AC-DC) converters. The device can also be used in other power management applications, such as motor control, power factor correction (PFC), and audio amplifiers.

The high current and voltage rating of the PMF780SN,115 make it an ideal device for power management applications. The device can be used to switch high concentrations of current with minimal power loss, making it efficient and cost-effective. The wide operating voltage range also makes it suitable for use in a variety of different applications.

The PMF780SN,115 is designed to operate in the linear or saturation region and the source and drain regions must have a negative voltage relative to the gate in order to remain in saturation and achieve a high current rating. Its low on-state resistance and high threshold voltage make it capable of providing fast switching times.

The PMF780SN,115 is a robust device with a wide operating temperature range of -55°C to 150°C and offers protection against electrostatic discharge. The device is also designed to meet the rigorous requirements of AEC-Q101 for automotive applications. The device is RoHS compliant and is available in a wide variety of standard packages, including D2PAK, DDPAK, DPAK, and TO-220.

The PMF780SN,115 is a versatile and reliable power metal oxide semiconductor field effect transistor for a variety of high power applications. Its high voltage, high current, low on-state resistance, and wide operating temperature range make it suitable for use in a variety of power converters and other power management applications. The device is widely available in a variety of standard packages and is RoHS compliant.

The specific data is subject to PDF, and the above content is for reference

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