PMN30UNX

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PMN30UNX is a single field effect transistor (FET) within the family of MOSFET. It is widely used in power distribution, output stage, amplifier circuitry, and switching applications. The device offers a wide temperature range, low drain-to-source voltage, and low on-state resistance for increased efficiency.

The PMN30UNX is a N-channel enhancement type MOSFET, which can be easily driven into an on-state by applying gate-source voltage. The device is designed to have better ESD (electrostatic discharge) performance and provides an enhanced energy storage capability with an on-chip ESD protection network. The PMN30UNX has a maximum drain current of 30A, maximum drain-source voltage of 40V, and peak drain-source voltage of 75V.

The device operates in three stated modes: inactive mode, ohmic (linear) mode, and active non-linear mode. In the inactive mode, the gate voltage is below the threshold voltage, Vth. In this state, the drain current (Igs) is approximately equal to zero.

In the ohmic mode the drain current is proportional to the gate-source voltage (Vgs). Above a certain value Vgs will increase the current, allowing more current to flow through the drain-source channel. The PMN30UNX achieves higher efficiency and improved performance by providing larger current carrying surfaces with a lower drain-source voltage.

In the active non-linear mode, the MOSFET operates in the saturated region where the drain current is almost independent of the gate-source voltage. This mode is used for high-current applications such as in amplifier circuitry, switching circuits, and other power distribution systems. The PMN30UNX has a high saturation drain current rating of 20A, a high breakdown voltage of 75V, and an on-state resistance as low as 0.058 ohms.

Overall, the PMN30UNX is a robust and reliable MOSFET ideal for a wide range of power-distribution, output stage, and switching applications. The MOSFET provides improved energy storage efficiency while consuming very low power that helps reduce system power losses. Furthermore, the device offers a wide temperature range, a low drain-to-source voltage, and a low on-state resistance to achieve higher efficiency.

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