Allicdata Part #: | 568-7419-2-ND |
Manufacturer Part#: |
PMN34LN,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 5.7A 6TSOP |
More Detail: | N-Channel 20V 5.7A (Tc) 1.75W (Tc) Surface Mount 6... |
DataSheet: | PMN34LN,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 20V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 13.1nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMN34LN,135 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that is often used when a higher voltage or current is needed. It is an n-channel type MOSFET and has a higher on-state current than comparable voltage-controlled transistors. This makes it useful in a wide range of applications where power efficiency or protection against reverse voltage is necessary.
The PMN34LN,135 has been designed to provide high current and voltage ratings, with a low amount of power dissipation. It is available in both thru-hole and surface mount packages and is designed to be electrically rugged and reliable. The device is constructed of a four-layer metal structure with a good balance of metal and oxide layers, which provides excellent EMI and thermal performance.
The device has an insulated gate and a body region formed by two adjacent doped-aluminum contacts. The gate is linked to a drain, which can function as an output, or an input for both switching and linear applications. The PMN34LN,135 has an optimized capacitance-voltage (C-V) curve, which ensures low power and high speed performance. This means that it is able to switch from on to off quickly and without any spikes in voltage or current, making it suitable for high-current applications.
The PMN34LN,135 offers a wide range of applications and can be used in a variety of circuits and systems. It is commonly used in power management applications, such as in power supplies and converters. It is also often used in safety-related systems, such as smoke detectors, factory automation systems and alarm systems. Furthermore, it is often used in automotive and aviation systems, such as in electric brakes and airbag triggers.
The working principle of the PMN34LN,135 is simple but effective. The gate of the device acts like a controllable switch, allowing for the control of the device’s current and voltage ratings. When a voltage is applied to the gate, it allows current to pass from the source to the drain. When the voltage is taken away from the gate, the MOSFET is turned off, preventing current from passing from the source to the drain.
The PMN34LN,135 is a versatile device that is suitable for a wide range of applications. It has the ability to switch quickly and efficiently, making it suitable for high current applications. It is also able to withstand high temperatures and withstand voltage or current spikes, making it useful in safety-related systems. Furthermore, it is widely available in both thru-hole and surface mount packages.
The specific data is subject to PDF, and the above content is for reference
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