PMN30XPX

Vgs(th) (Max) @ Id:	900mV @ 250µA
Package / Case:	SC-74, SOT-457
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	550mW (Ta), 6.25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1575pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	34 mOhm @ 5.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	5.2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMN30XPX Application Field and Working PrinciplePMN30XPX is a 150V, N-Channel enhancement-mode power MOSFET field effect transistor (FET), which can be widely used in many high current and voltage applications. Featuring a low on-resistance, fast switching speed and high performance output, this capable device can be conveniently and flexibly used in a broad range of applications.The basic structure of the PMN30XPX is similar to a BJT or any other FET. It is comprised of a Silicon substrate, source (S) and drain (D) regions, and a Gate (G) region. Where a BJT has a collector, base and emitter regions. The device mainly uses the movement of electrons between the S and D regions, which is regulated by the Voltage applied to the Gate region, to yield the desired output. Unlike a BJT, the MOSFET works differently because a MOSFET is an insulated-gate field-effect transistor that relies on an electric field, rather than an electron flow from the base to use a simple analogy, an insulated gate field-effect transistor (MOSFET) is like a tap that is turned on and off by the electric field. The Gate region of the PMN30XPX consists of a metal-oxide-semiconductor (MOS) layer that effectively separates the Gate from the S and D regions. When the gate-source voltage is greater than a certain threshold, the MOSFET switches on and electrons can flow freely between the S and D regions.In applications where high current is required, the PMN30XPX is an ideal choice due to its low on-resistance. This is because the greater the voltage applied to the Gate, the lower the resistance between the S and D regions. The device can be quickly and flexibly activated and deactivated by the gate-source voltage, making it ideal for applications such as switch-mode power supplies. In addition to the low on-resistance, the device also has a fast switching speed. This is because the rise and fall times of the Gate-Source voltage directly affect the switching speed, allowing for faster switching times than other available FETs.The PMN30XPX is also known for its high performance. The device has a breakdown voltage of 150V, making it well suited for high voltage applications. In addition, the device features a maximum drain current of 72A, making it capable of driving a higher current than other similar FETs. This makes the device an ideal choice for high current applications such as HID drivers, DC-DC converters, brushless motor and DC motor controllers.The PMN30XPX is widely used in many applications due to its low on-resistance, fast switching speed, and high performance. The device is well suited for applications such as switch-mode power supplies, HID drivers, DC-DC converters, and brushless motor and DC motor controllers. The device is also easy to use, as it only requires a Gate-Source voltage to operate. This makes the PMN30XPX a versatile device that can be used in a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description