Allicdata Part #: | 568-7438-2-ND |
Manufacturer Part#: |
PMR400UN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 0.8A SOT416 |
More Detail: | N-Channel 30V 800mA (Tc) 530mW (Tc) Surface Mount ... |
DataSheet: | PMR400UN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 530mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 43pF @ 25V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.89nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 800mA (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMR400UN,115 is a N-channel MOSFET transistor, also known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). MOSFETs are active electronic components that consist of an insulated-gate field-effect transistor. They provide superior performance over other types of transistors, mainly due to their low-voltage, low-power consumption, and low-noise features. These features make them ideal for a variety of applications, such as power conversion, voltage regulation, motor control, and switching.
MOSFETs, such as the PMR400UN,115, utilize the properties of semiconductor materials to achieve their purpose. At the core of the PMR400UN,115 is a layered N-type semiconductor material. This material has a source, drain, and gate. The source is the input, the drain is the output, and the gate acts as an adjustable gate voltage to control the conductivity of the MOSFET. The gate voltage is determined by a potential difference between two electrodes, and this potential difference determines the current flow through the device. The gate voltage is also used to turn the switch on and off, which is referred to as the on/off switch.
The PMR400UN,115 is designed for applications such as power conversion, voltage regulation, motor control, and switching. It is a high voltage, high power MOSFET and is particularly suitable for switching applications that require high current or high voltage. This is because the PMR400UN,115 MOSFET has a very low input capacity, which means it can withstand large voltage drops without dissipating too much power. It is also designed to be highly efficient and reliable, so it is capable of handling high power without degrading its performance.
The PMR400UN,115 is also designed to be very compact, so it can be used in applications where space is limited. This makes it ideal for applications where a high level of power needs to be switched quickly and efficiently. It is also capable of handling a wide range of temperatures and is capable of operating at higher temperatures than other types of transistors.
The PMR400UN,115 is a very versatile MOSFET and can be used in a wide range of applications. It is ideal for applications that require high-power handling and high current or voltage switching, as well as for applications that require low input and output capacitances. It is also suitable for applications that require high-temperature operation and for applications that require fast switching speeds. Therefore, it is ideally suited for a variety of applications, from power conversion and voltage regulation, to motor-control and switching.
The specific data is subject to PDF, and the above content is for reference
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