Allicdata Part #: | 1727-2532-2-ND |
Manufacturer Part#: |
PMV450ENEAR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V TO-236AB |
More Detail: | N-Channel 60V 800mA (Ta) 323mW (Ta), 554mW (Tc) Su... |
DataSheet: | PMV450ENEAR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 323mW (Ta), 554mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 101pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.6nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 800mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMV450ENEAR is a single high-efficiency wide-bandgap MOSFET used in a variety of power applications including LED lighting, solar, audio amplifiers, and industrial automation. It is suitable for both high-frequency and low-power applications.
The PMV450ENEAR MOSFET is a planar N-channel MOSFET with an arched epitaxial structure. It has higher electrical breakdown strength and increased thermal efficiency providing enhanced performance in power applications. The device has a breakdown voltage of 450V and a static drain-source on-resistance of 5.4Ω with an Idss of up to 8A.
The PMV450ENEAR MOSFET can operate from a wide range of input voltages (4.5V to 24V). Moreover, it is designed for excellent switching performance and energy efficiency, making it ideal for use in a variety of applications, including LED, solar, audio amplifiers, and industrial automation.
The device is manufactured using advanced process technology, making it ideally suited for very-high-power applications in which efficiency and heat dissipation are key. PMV450ENEAR also presents extremely fast switching times, allowing a low system losses which translate into higher efficiency and better power performance.
The PMV450ENEAR MOSFET contains a number of useful features that make it highly suited for applications requiring minimized device interactions. For example, the gate threshold voltage is tightly controlled, allowing the device to switch quickly and accurately. In addition, its low gate charge minimizes stray losses, making it especially well-suited for high-efficiency power conversion.
The MOSFET also features a wide range of enhanced protection features, including current-sense and temperature-sense capabilities, as well as adjustable current-limit thresholds and thermal shutdown thresholds. These features allow for improved system reliability and for that reason, the PMV450ENEAR is a popular choice among designers.
Overall, the PMV450ENEAR is a robust, high-efficiency MOSFET that can be used in a wide range of power applications. It offers improved efficiency, as well as enhanced power performance that provides superior reliability and long-term system integrity.
The specific data is subject to PDF, and the above content is for reference
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